Справочник MOSFET. SI2308

 

SI2308 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI2308
   Маркировка: A82TF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для SI2308

 

 

SI2308 Datasheet (PDF)

 ..1. Size:462K  shenzhen
 si2308.pdf

SI2308 SI2308

Shen zhen TuoFeng Semiconductor Technology co., LTDSi2308N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.16 @ VGS = 10 V 2.060600.22 @ VGS = 4.5 V 1.7TO-236(SOT-23)G 13 DS 2Top ViewSi2308DS (A8)**Marking CodeOrdering Information: Si2308DS-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

 0.1. Size:246K  vishay
 si2308bds.pdf

SI2308 SI2308

New ProductSi2308BDSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.156 at VGS = 10 V 2.360 2.3 nC 100 % Rg Tested0.192 at VGS = 4.5 V 2.1 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC Converter

 0.2. Size:243K  vishay
 si2308bd.pdf

SI2308 SI2308

New ProductSi2308BDSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.156 at VGS = 10 V 2.360 2.3 nC 100 % Rg Tested0.192 at VGS = 4.5 V 2.1 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC Converter

 0.3. Size:183K  vishay
 si2308ds.pdf

SI2308 SI2308

Si2308DSVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.16 at VGS = 10 V 2.0 TrenchFET Power MOSFET600.22 at VGS = 4.5 V 1.7 100 % Rg TestedTO-236(SOT-23)G 13 DS 2Top ViewSi2308DS (A8)** Marking CodeOrdering Information: Si2308DS-T1Si2308

 0.4. Size:234K  vishay
 si2308cds.pdf

SI2308 SI2308

Si2308CDSwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSOT-23 (TO-236) TrenchFET Gen IV power MOSFETD 100 % Rg tested3 Material categorization: for definitions of compliance please see www.vishay.com/doc?999122DS APPLICATIONS Battery switch1G DC/DC converterTop View Load switchGMarking code: G3PRODUCT SUMMARY

 0.5. Size:1328K  kexin
 si2308ds-3.pdf

SI2308 SI2308

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2+0.02 RDS(ON) 160m (VGS = 10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 220m (VGS = 4.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramete

 0.6. Size:1329K  kexin
 si2308ds ki2308ds.pdf

SI2308 SI2308

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2+0.02 RDS(ON) 160m (VGS = 10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 220m (VGS = 4.5V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramete

 0.7. Size:1319K  kexin
 si2308ds.pdf

SI2308 SI2308

SMD Type MOSFETN-Channel MOSFETSI2308DS (KI2308DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 2 A (VGS = 10V)1 2 RDS(ON) 160m (VGS = 10V)+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 220m (VGS = 4.5V)1.9+0.1-0.11. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symb

 0.8. Size:1497K  umw-ic
 si2308a.pdf

SI2308 SI2308

RUMWUMW SI2308AUMW SI2308AN-Channel MOSFETSOT23 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 160m (VGS = 10V) RDS(ON) 220m (VGS = 4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGMS08G 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Ta=

 0.9. Size:1472K  cn vbsemi
 si2308bds.pdf

SI2308 SI2308

SI2308BDSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

 0.10. Size:861K  cn vbsemi
 si2308ds-t1-ge3.pdf

SI2308 SI2308

SI2308DS-T1-GE3www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT2

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