SI2319 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2319 P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)b APPLICATIONS 0.082 @ VGS = -10 V -3.0 -40 40 D Load Switch 0.130 @ VGS = -4.5 V -2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319 (C91T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

R UMW UMW SI2319 SOT-23 Plastic-Encapsulate MOSFETS SI2319 P-Channel 40-V(D-S) MOSEFET V(BR)DSS RDS(on)MAX ID 45m @ - 10V - 40 V - 4.4A 65m @ - 4.5V FEATURE TrenchFET Power MOSFET SOT 23 Low RDS(ON) Surface Mount Package APPLICATION Load Switch for Portable Devices DC/DC Converter Battery Switch 1. GATE 2. SOURCE MARKING 3. DRAIN Equiva

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)b Available 0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0 - 40 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Informati

SMD Type MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-40V 3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Par

SI2319CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

SI2319DS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter