GOFORD1515Description The 1515 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can VDSS RDS(ON) IDbe used in Automotive applications and a wide variety of other applications. 150V m 150A

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ03002SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200)Rev.3.00Silicon N Channel MOS FET May 16, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

2SC1515(K)Silicon NPN Triple DiffusedApplicationHigh voltage switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1515 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCES 200 VVCEO 150 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollector power dissipat

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2m General Description Features The MDU1515 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 57.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1515 is suitable device for DC/DC Converter

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

PP1515AD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 150V 15m 50A 1: GATE 2: DRAIN G 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC

PP1515AK N-Channel Enhancement Mode NIKO-SEM PDFN 5X6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 15m 44A G. GATE D. DRAIN S. SOURCE S #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Vol

PP1515AF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 150V 15m 35A 1: GATE 2: DRAIN G 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC

TW1515ASIAO3400SI2305 N-Channel Enhancement Mode Field Effect Transistor Features General Description VDS = 20V, load switch for Portable Applications ID = 5.5A DC/DC Converters RDS(ON) @VGS= 10V, TYP 25m RDS(ON) @VGS= 4.5V, TYP 27m RDS(ON) @VGS= 2.5V, TYP 34m Pin Configurations SOT-23 Absolute Maximum Ratings @T =25 unless otherwise

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and

isc N-Channel MOSFET Transistor 2SK1515ESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI