Справочник MOSFET. 1515

 

1515 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 1515

Маркировка: 1515

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 460 W

Предельно допустимое напряжение сток-исток (Uds): 150 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 150 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 110 ns

Выходная емкость (Cd): 1446 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: TO247

Аналог (замена) для 1515

 

 

1515 Datasheet (PDF)

1.1. 2sa1515s.pdf Size:110K _update

1515

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

1.2. 2sk1515.pdf Size:84K _renesas

1515
1515

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE

 1.3. r07ds0397ej 2sk115152.pdf Size:119K _renesas

1515
1515

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS P

1.4. rej03g0946 2sk1515ds.pdf Size:97K _renesas

1515
1515

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 1.5. 2sa1515s 2sb1237.pdf Size:143K _rohm

1515
1515

Medium Power Transistor (?32V,??1A) 2SA1515S / 2SB1237 ?Features ?Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237 + 2.5 0.2 VCE(sat) = ?0.2V(Typ.) + + + - 4 0.2 2 0.2 6.8 0.2 - - - (IC / IB = ?500mA / ?50mA) 2) Compliments 2SD1858 ?Structure 0.45 +0.15 0.65Max. -0.05 Epitaxial planar type + PNP silicon transistor 0.5 0.1 - 0.45 +0.15 2.5 +0.4 0.5 -0.05 -0.1

1.6. 2sb1132 2sa1515s 2sb1237.pdf Size:75K _rohm

1515
1515

2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor (-32V,-1A) 2SB1132 / 2SA1515S / 2SB1237 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1132 2SA1515S + + 4 0.2 2 0.2 - - VCE(sat) = -0.2V(Typ.) 4.5 +0.2 -0.1 1.5 +0.2 + (IC / IB = -500mA / -50mA) 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 -

1.7. 2sc1515.pdf Size:28K _hitachi

1515
1515

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipation

1.8. 1515.pdf Size:1587K _goford

1515
1515

GOFORD 1515 Description The 1515 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can VDSS RDS(ON) ID be used in Automotive applications and a wide variety of other applications. 150V mΩ 150A < 8 General Features ● VDSS RDS(ON) ID @ 10V (typ) 150V mΩ 150A 6.6 ● Good stability and uniformity with high EAS ● Speci

1.9. mdu1515urh.pdf Size:1008K _magnachip

1515
1515

 MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2mΩ General Description Features The MDU1515 uses advanced MagnaChip’s MOSFET  VDS = 30V Technology, which provides high performance in on-state  I = 57.4A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDU1515 is suitable device for DC/DC Converter < 7.2 mΩ @V = 10V GS an

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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