Справочник MOSFET. 2301

 

2301 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2301

Маркировка: 2301

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 3 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 35 ns

Выходная емкость (Cd): 75 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm

Тип корпуса: SOT23

Аналог (замена) для 2301

 

 

2301 Datasheet (PDF)

1.1. sq2301es.pdf Size:216K _update

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SQ2301ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 20 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.120 • AEC-Q101 Qualifiedd RDS(on) () at VGS = - 2.5 V 0.180 • 100 % Rg and UIS Tested ID (A) - 3.9 • Compliant to RoHS Directive

1.2. st2301a.pdf Size:186K _upd

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 ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not

 1.3. msp2301n3.pdf Size:1196K _upd-mosfet

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 Bruckewell Technology Corp., Ltd. http://www.bruckewell.com/semicon 20V P-CHANNEL Enhancement Mode MOSFETProduct Specification MSP2301N3 ●FEATURES: • VDS=-20V RDS(ON)=130mΩ@VGS=-4.5V, IDS=-2.8A RDS(ON)=190mΩ@VGS=-2.5V, VDS=-20V RDS(ON)=130mΩ @VGS=-4.5V, IDS=-2A • Advanced trench process technology IDS=-2.8A RDS(ON)=190mΩ @VGS=-2.5V, • High density cell design

1.4. am2301p.pdf Size:306K _upd-mosfet

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Analog Power AM2301P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 130 @ VGS = -4.5V -2.6 • Low thermal impedance -20 190 @ VGS = -2.5V -2.2 • Fast switching speed SOT-23 Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLE

 1.5. afp2301as.pdf Size:651K _upd-mosfet

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AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

1.6. am2301pe.pdf Size:84K _upd-mosfet

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Analog Power AM2301PE P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6 -20 battery-powered product

1.7. afp2301a.pdf Size:651K _upd-mosfet

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AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

1.8. am2301.pdf Size:336K _upd-mosfet

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AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement  -20V/-3.2A, R =90mΩ(typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using  -20V/-2.0A, R =130mΩ(typ.)@V =-2.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density cell de

1.9. stp2301.pdf Size:371K _upd-mosfet

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STP2301 -20V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP2301 is the P-Channel logic enhancement  -20V/-3.0A, RDS(ON) =80mΩ(typ.)@VGS =-4.5V mode power field effect transistor is produced using  -20V/-2.0A, RDS(ON) =105mΩ(typ.)@VGS =-2.5V high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and  Super h

1.10. ssm2301gn.pdf Size:150K _upd-mosfet

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SSM2301N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -20V DSS Small package outline RDS(ON) 130mΩ D Surface-mount device ID -2.3A S SOT-23 G Description D Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, low G on-resistance and cost-effectiveness. S The SOT-23 package is widely preferred for co

1.11. afp2301.pdf Size:519K _upd-mosfet

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AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

1.12. afp2301s.pdf Size:519K _upd-mosfet

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AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

1.13. tsm2301bcx.pdf Size:119K _update_mosfet

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1.14. ki2301ds.pdf Size:351K _update_mosfet

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SMD Type IC SMD Type MOSFE SMD Type MOSFET SMD Type MOSFET SMD Type MOSFET Product specification KI2301 DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = -20V ● RDS(ON) < 100mΩ (VGS = -4.5V) 1 2 +0.1 +0.05 ● RDS(ON) < 150mΩ (VGS = -2.5V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 D 1.Base 1.Base 1. Gate 2.Emitter 2.Emitter 2. Source 3.

1.15. pj2301.pdf Size:290K _update_mosfet

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PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ 0.120(3.04) • Advanced Trench Process Technology 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters • Low gate charge • 0.056(1

1.16. cht2301gp.pdf Size:272K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHT2301GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged

1.17. lp2301alt1g.pdf Size:383K _update_mosfet

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V LP2301ALT1G ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 APPLICATIONS 1 ● Power Management in Note book 2 ● Portable Equipment SOT– 23 ● Battery Powered System ● Load Switch ● DSC 3 Ordering Inform

1.18. tsm2301acx tsm2301cx.pdf Size:340K _update_mosfet

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 TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(mΩ) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch P-Channel MOSFET Orderi

1.19. cht2301wgp.pdf Size:218K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHT2301WGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing dens

1.20. bws2301.pdf Size:558K _update_mosfet

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 Bruckewell Technology Corp., Ltd. P-Channel Enhancement-Mode MOSFETs BWS2301 MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant Dimensions in millimeter Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol BWS2301 Unit Drain-Source Voltage BVDSS -20 V Gate- Source Voltage VGS +/-8 V Drain Current (continuous) ID -2.3 A Dr

1.21. lp2301lt1g.pdf Size:260K _update_mosfet

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V R Vgs@-4.5V, Ids@-2.8A = 100 mΩ DS(ON), mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 Fully Characterized Avalanche Voltage and Current SOT– 23 (TO–236AB) Improved Shoot-Through FOM ▼Si

1.22. chm2301esgp.pdf Size:132K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHM2301ESGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Po rtable * High speed switch FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON) * Suitable for high packing density. * Rugged and reliable. (1) * High saturation current capabili

1.23. mmp2301.pdf Size:152K _update_mosfet

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MMP2301 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mΩ RDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT- 23 Internal Schematic Diagram Top View P-Channel MOSFET M

1.24. ki2301bds.pdf Size:49K _update_mosfet

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SMD Type Transistors P-Channel 2.5-V (G-S) MOSFET KI2301BDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features 12 RoH Lead (Pb)-Free Version is RoHS Compliant. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-

1.25. tp2301pr.pdf Size:322K _update_mosfet

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 TP2301PR P-CHANNEL ENHANCEMENT-MODE MOSFET FEATURES  ADVANCED TRENCH PROCESS TECHNOLOGY  HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE  FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT  IMPROVED SHOOT-THROUGH FOM  BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA  WE DECLARE THAT

1.26. rn2301 rn2302 rn2303 rn2304 rn2305 rn2306.pdf Size:454K _toshiba

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RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

1.27. si2301ads.pdf Size:46K _vishay

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Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.130 @ VGS = 4.5 V 2.0 20 0.190 @ VGS = 2.5 V 1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source V

1.28. si2301-tp.pdf Size:333K _vishay

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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone: (818) 701-4933 Fax: (818) 701-4939 Features P-Channel • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V Enhancement Mode • High dense cell design for extremely low RDS(ON) • Rugged and reliable Field Effect Transistor • High Sp

1.29. si2301cds.pdf Size:193K _vishay

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Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 • TrenchFET® Power MOSFET - 20 3.3 nC • Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS • Load Switch TO-236 (SOT-23) G

1.30. si2301bds.pdf Size:184K _vishay

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Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?) ID (A)b Pb-free 0.100 at VGS = - 4.5 V Available - 2.4 - 20 0.150 at VGS = - 2.5 V RoHS* - 2.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free)

1.31. si2301ds.pdf Size:61K _vishay

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Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V -2.3 -20 20 0.190 @ VGS = - 2.5 V -1.9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V

1.32. si2301cd.pdf Size:190K _vishay

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Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET - 20 3.3 nC Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2

1.33. dmg2301u.pdf Size:148K _diodes

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DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leaka

1.34. zxtp23015cfh.pdf Size:190K _diodes

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ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V(BR)CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The co

1.35. zxtn23015cfh.pdf Size:169K _diodes

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ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V(BR)CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings

1.36. si2301.pdf Size:324K _mcc

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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone: (818) 701-4933 Fax: (818) 701-4939 Features P-Channel -20V,-2.8A, RDS(ON)=120m?@VGS=-4.5V RDS(ON)=150m?@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor High Speed Switching

1.37. ut2301z.pdf Size:159K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve

1.38. ut2301.pdf Size:183K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET ? DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as

1.39. smg2301.pdf Size:391K _secos

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SMG2301 ? -2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & RoHS compliant SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 The SMG2301 is universally preferred for all commercial S B Top View 2 1 C 1.00 1.30 industrial surface mount application and suited for low

1.40. smg2301p.pdf Size:751K _secos

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SMG2301P -2.6 A, -20 V, RDS(ON) 130 m? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure A L minimal power loss and heat dissipation.Typical applications 3 3 are

1.41. tsm2301.pdf Size:118K _taiwansemi

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1.42. si2301.pdf Size:3667K _htsemi

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SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.4

1.43. ces2301.pdf Size:845K _cet

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CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100m? @VGS = -4.5V. RDS(ON) = 150m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

1.44. cen2301.pdf Size:416K _cet

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CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m? @VGS = -4.5V. RDS(ON) = 160m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-S

1.45. gm2301.pdf Size:293K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2301 SOT-23 ??????(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P

1.46. gms2301.pdf Size:262K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMS2301 SOT-23 ??????(SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P MOS P MOS P?????MOS???? MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM

1.47. wtc2301.pdf Size:566K _wietron

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WTC2301 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -2.3 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)<100m?@VGS=-4.5V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Applications *Power Management in Notebook Computer *Portable Equipm

1.48. se2301.pdf Size:474K _willas

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FM120-M WILLAS SE2301THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize bo

1.49. h2301n.pdf Size:88K _hsmc

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Spec. No. : MOS200612 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.11 MICROELECTRONICS CORP. Page No. : 1/4 H2301N Pin Assignment & Symbol H2301N 3 3-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code: N Pin 1: Gate 2: Source 3: Drain 2 1 Source Features Gate Drain • RDS(on)<100m?@VGS=-4.5V, ID=-2.8A • RDS(on)<150m?@

1.50. ap2301agn.pdf Size:93K _a-power

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AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Package Outline RDS(ON) 97mΩ D ▼ Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

1.51. ap2301n-hf.pdf Size:59K _a-power

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AP2301N-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V Gate Drive BVDSS -20V D Ў Small Package Outline RDS(ON) 130m? Ў Surface Mount Device ID -2.3A S Ў RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,low o

1.52. ap2301agn-hf.pdf Size:56K _a-power

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AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS -20V D Ў Small Package Outline RDS(ON) 97m? Ў Surface Mount Device ID - 3.3A S Ў RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-re

1.53. ap2301gn.pdf Size:93K _a-power

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AP2301GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Package Outline RDS(ON) 130mΩ D ▼ Surface Mount Device ID - 2.6A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

1.54. ap2301en.pdf Size:150K _a-power

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AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS -20V D ▼ Small Package Outline RDS(ON) 130mΩ ▼ Surface Mount Device ID -2.3A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

1.55. ap2301gn-hf.pdf Size:97K _a-power

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AP2301GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS -20V Ў Small Package Outline RDS(ON) 130m? D Ў Surface Mount Device ID - 2.6A Ў RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance a

1.56. ap2301en-hf.pdf Size:96K _a-power

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AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS -20V D ▼ Small Package Outline RDS(ON) 130mΩ ▼ Surface Mount Device ID -2.3A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

1.57. ap2301bgn-hf.pdf Size:93K _a-power

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AP2301BGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS -20V Ў Small Package Outline RDS(ON) 130m? D Ў Surface Mount Device ID - 2.8A Ў RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low

1.58. mtp2301n3.pdf Size:311K _cystek

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Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2012.12.30 Page No. : 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID -3.4A 79mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-2.8A 116mΩ(typ.) RDSON(MAX)@VGS=-2.5V, ID=-2A Features • Advanced trench process technology • High density cell design for ultra low on resistance

1.59. mtp2301s3.pdf Size:302K _cystek

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Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301S3 ID -1.6A 75mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113mΩ(typ.) RDSON(MAX)@VGS=-2.5V, ID=-1A Features • Advanced trench process technology • High density cell design for ultra low on resistance

1.60. 2301h.pdf Size:2066K _goford

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GOFORD 2301H DESCRIPTION D2 The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2 GENERAL FEATURES ● Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) mΩ mΩ -2 -30V 105 65 A 2301H

1.61. 2301l.pdf Size:1274K _goford

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GOFORD 2301L DESCRIPTION D The 2301L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64mΩ 89 mΩ -3 A ● High Power

1.62. 2301.pdf Size:1181K _goford

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GOFORD 2301 DESCRIPTION D The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64mΩ 89 mΩ -3 A ● High Power a

1.63. sts2301.pdf Size:134K _samhop

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Green Product S TS 2301 S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 60 @ VG S = -4.5V -20V -3.4A 80 @ VG S = -2.5V S OT-23 package. 105 @ VG S = -1.8V D S OT-23 G S AB S OLUTE MAXI

1.64. sts2301a.pdf Size:101K _samhop

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Green Product STS2301A a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 95 @ VGS=-4.5V Suface Mount Package. -20V -2.6A 130 @ VGS=-2.5V D S OT23-3L D G S G S (TC=25°C unless otherwise noted) ABSOLUTE MAXIMUM RAT

1.65. ssf2301.pdf Size:566K _silikron

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 SSF2301 Main Product Characteristics: D VDSS -20V G RDS(on) 60mΩ (typ.) S ID -3A ① Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body re

1.66. ssf2301b.pdf Size:282K _silikron

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SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Pow

1.67. ssf2301a.pdf Size:275K _silikron

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SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V ● High Power

1.68. cs2301 sot-23.pdf Size:300K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2301 MOSFET(P-Channel) FEATURES renchFET Power MOSFET T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage ±12 V ID Drain current -3 A PD Powe

1.69. dmg2301u.pdf Size:118K _tysemi

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Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • Low On-Resistance ID max V(BR)DSS RDS(ON) max • Low Input Capacitance TA = +25°C • Fast Switching Speed 80mΩ @ VGS = 4.5V -2.7A -20V • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110mΩ @ VGS = 2.5V -2.1A • Halogen and Antimony Free. “Green” Device (N

1.70. nx2301p.pdf Size:223K _tysemi

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Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Driv

1.71. ftk2301.pdf Size:284K _first_silicon

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SEMICONDUCTOR FTK2301 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET 3 ● Features Low on-resistance 2 R =4.5V, I =2.8A ) = 100mΩ DS(ON) (VGS ds 1 R =2.5V, I =2.0A ) = 150mΩ DS(ON) (VGS ds SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 3 D ● We declare that

1.72. si2301ds-3.pdf Size:1968K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 se

1.73. si2301bds.pdf Size:1887K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 0.4+0.1 -0.1 ● VDS (V) =-20V 3 ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Stea

1.74. ki2301t.pdf Size:322K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET KI2301T SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-12V ● ID =-2.8 A 1 2 ● RDS(ON) < 115mΩ (VGS =-4.5V) +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 ● RDS(ON) < 160mΩ (VGS =-2.5V) 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Sou

1.75. si2301ds.pdf Size:1698K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) ■ Features SOT-23 Unit: mm +0.1 2.9 -0.1 ● VDS (V) =-20V +0.1 0.4-0.1 ● RDS(ON) < 130mΩ (VGS =-4.5V) 3 ● RDS(ON) < 190mΩ (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

1.76. si2301bds-3.pdf Size:1943K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5

1.77. si2301 a1shb.pdf Size:885K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2301 P-Channel SI2301 MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = -4.5 V -2.8 -20 20 0.190 @ VGS = -2.5 V -1.8 (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source V

1.78. si2301a.pdf Size:1114K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301A P-Channel SI2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = -4.5 V -2.8 -20 20 0.110 @ VGS = -2.5 V -2.0 SOT-23/-3L G 1 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source Voltage VGS "8 Continuous Drain Curr

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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