G23 - описание и поиск аналогов

GOFORD G23 D Description The G23 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -18V 23m 27m -6 A G23 High Pow

BLS7G2325L-105 Power LDMOS transistor Rev. 2 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Order

DTDG23YP Transistors 1A / 60V Digital transistor (with built-in resistors and zener diode) DTDG23YP Applications External dimensions (Unit mm) Inverter, Interface, Driver MPT3 4.5 1.5 Features 1.6 1) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA) (1) (2) (3) 3) Built-in zener diode gives strong protection aga

(96-294-B114

SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Avalanche energy rated (UIS) Qgd (nC) 25

DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 90m @ VGS = 4.5V 4.2A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.7A Halogen and Antimony Free. Green Device

DMG2301LK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Low Input Capacitance BVDSS RDS(ON) Max TA = +25 C Fast Switching Speed ESD Protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V Halogen and Antimony Free. Green Device (Note 3) 210

DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 90m @ VGS = -10V -3.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -30V 134m @ VGS = -4.5V -3.1A

DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) Max Package TA = +25 C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25 C Fast Switching Speed 90m @ VGS = 4.5V 2.8A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.4A Halogen and Antimony Free. Gre

DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) -20V -3A 150m @ VGS = -2.5V De

DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

Over 150 million die shipped per year NPN Bipolar G133 Chip Family DESCRIPTION FEATURES HIGH CURRENT - UP TO 160 AMPS The G133 chip family is an NPN bipolar multi-epitaxial planar HIGH VOLTAGE - UP TO 550 VOLTS (VCBO) transistor intended for applications requiring fast switching, low FAST SWITCHING (tf = 0.1 s) saturation, high power robust VERY LOW SAT

SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2334N 3.5A, 30V, RDS(ON) 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and A L to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high A cell density process.Low RDS(on) assures minimal power L 3 loss and conserves energy, making this device ideal for 3 use in power man

SMG2305 -4.2A, -20V,RDS(ON) 65m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of -C specifies halogen & lead-free Description SC-59 A Dim Min Max The SMG2305 provide the designer with the best L combination of fast switching, low on-resistance A 2.70 3.10 3 and cost-effectiveness. B 1.40 1.60 S B Top View 2 1

SMG2343P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize A high cell density process. Low RDS(on) assures minimal L 3 power loss and conserves energy, making this device 3 Top View C B ideal for use

SMG2302 3.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 S B Top View The SMG2302 provide the designer with the best 2 1 C 1.00 1.30 Combination of fast switching, low on-resistance D 0.35 0.50 and

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T

SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power A L loss and heat dissipation. Typical applica

SMG2330N 5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High A Cell Density process. Low RDS(on) assures minimal power L loss and conserves energy, making this device ideal for 3 3 use

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers

SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation. 3 3 Top

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure A L minimal power loss and heat dissipation. Typical applicati

SMG2342NE 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and A to ensure minimal power loss and heat dissipation. Typical L 3 applications

SMG2391P -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 FEATURES Low RDS(on) trench technology A L Low thermal impedance 3 3 Fast switching speed Top View C B 1 1 2 2 K E APPLICATIONS D PoE Power Sourcing Equipment

SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal A L power loss and conserves energy, making this device 3 3 ideal for use in

SMG2306A 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all co

SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss A L and heat dissipation. Typical applicat

SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) A L and to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power

SMG2336N 2.5 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 Top

SMG2340NE 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure A minimal power loss and heat dissipation. Typical applications L 3 ar

SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell A Density process. Low RDS(on) assures minimal power loss and L conserves energy, making this device ideal for use in power 3 3

SMG2328 100V, 250m , 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercia

SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 applicat

SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure A L minimal power loss and heat dissipation.Typical applications 3 3

SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, A L making this device ideal for use in power

SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use A L in power management

SMG2358N 2.8 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power A L loss and heat dissipation. Typical applicatio

SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 applicati

SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal A L power loss and conserves energy, making this 3 3 device ideal for use in power m

SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize A L High Cell Density process. Low RDS(on) assures 3 3 minimal power loss and conserves energy, making Top View C B this device i

SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1

SMG2301 -2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & RoHS compliant SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 The SMG2301 is universally preferred for all commercial S B Top View 2 1 C 1.00 1.30 industrial surface mount application and suited for l

SMG2343 -4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to A provide excellent on-resistance with low gate change. L 3 The device is suitable for use as a load switch or in PW

SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss heat dissipation. Typical applications

SMG2359P -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management ci

SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 app

SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. 3 Top View C

SMG2370N 1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3

SMG2340N 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure A L minimal power loss and heat dissipation. Typical applications

SMG2328S 1.2A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG2328S utilized advanced processing A L techniques to achieve the lowest possible on-resistance, 3 3 extremely efficient and cost-effectiveness device. The

G2302 N-Channel 20-V(D-S) Mosfet 1. GATE SOT-23 2. SOURCE 3. DRAIN Features TrenchFET Power MOSFET Applications Load Switch for Portable Devices DC/DC Converter Dimensions in inches and (millimeters) MARKING 2302 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Dra

G2305 P-Channel 20-V(D-S) Mosfe DESCRIPTION D The 2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4.1A RDS(ON)

FM120-M WILLAS SMG2305L THRU P-Channel Enhancement Mode Power Mos.FET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better r Descriptioneverse leakage current and thermal resistance. SOD-123H SC-59 Low profile surface mounted applic

GOFORD G2304 D Description The 2304 uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 3.6 30V 61 47 A G2304 High power and current handing capability Lead f

GOFORD G2305 DESCRIPTION D The 2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G2305 -20V 45 m 60m -4.8 A

3CG23 PNP A B C D E F G PCM 700 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.

Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 80m @ VGS = 4.5V -2.7A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 2.5V -2.1A Halogen and Antimony Free. Green Device (N

Product specification DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 90m @ VGS = -10V -3.8A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) -30V 134m @ VGS = -4.5V -3.1A Qualified to AEC-Q10

Product specification DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D Low Input/Output Leakage Terminal

2SC2308(3DG2308) NPN /SILICON NPN TRANSISTOR , 2SA1030(3CG1030) Purpose Low frequency amplifier, complementary pair with 2SA1030(3CG1030). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 100 mA C I -100 mA E P 200 mW C T

2SC2383(3DG2383) NPN /SILICON NPN TRANSISTOR , Purpose Color TV class B sound output applications. V , 2SA1013(3CG1013) CEO Features High V , complementary pair with 2SA1013(3CG1013). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 160

2SC2383T(3DG2383T) NPN /SILICON NPN TRANSISTOR , Purpose Color TV class B sound output applications. V , 2SA1013T(3CG1013T) CEO Features High V , complementary pair with 2SA1013T(3CG1013T). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit

SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

DMG2301U www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION

DMG2307L www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

G2309 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

SMG2339P www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

G2306A www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1