IRF510S - Даташиты. Аналоги. Основные параметры

PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number 91016 www.vishay.com 1 IRF510SPbF Document Number 91016 www.vishay.com 2 IRF510SPbF Document Number 91016 www.vishay.com 3 IRF510SPbF Document Number 91016 www.vishay.com 4 IRF510SPbF Document Number 91016 www.vishay.com 5 IRF510SPbF Document Number 91016 www.vishay.com 6 IRF510SPbF Peak Diode

IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization for definitions of compliance S S please see www.

IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 175 C Operating Temperature Qgd (nC) 3.8 Fast Switching Ea

PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number 91015 www.vishay.com 1 IRF510PbF Document Number 91015 www.vishay.com 2 IRF510PbF Document Number 91015 www.vishay.com 3 IRF510PbF Document Number 91015 www.vishay.com 4 IRF510PbF Document Number 91015 www.vishay.com 5 IRF510PbF Document Number 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175 C Operating Temperature n Lower Leakage Current 10 A (Max.) @ VDS = 100V n Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli

IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 100 Available Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.54 175 C operating temperature Available Qg max. (nC) 8.3 Fast switching Qgs (nC) 2.3 Ease of paralleling Qgd (nC) 3.8 Simple drive requirements Configuration Single

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli