G120N04A - описание и поиск аналогов

GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized a

GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized a

GOFORD G120N04 Description The 120N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 120 40V 5.6 3.3 A High density cell design for ultra low Rdson Fully characterized

GOFORD G120N04 Description The G120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID Schematic diagram @ (Typ) @10V (Typ) 4.5V 40V 5.5m 3.2m 120 A High density cell design for ultra low Rdson Fully characterized ava

APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un