IRF520 - параметры транзистора MOSFET, его аналоги, datasheet

IRF520 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRF520
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.2 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO220AB

Аналог (замена) для IRF520

- подбор MOSFET транзистора по параметрам

IRF520 Datasheet (PDF)

..1. Size:214K international rectifier
irf520pbf.pdf pdf_icon

PD - 94850IRF520PbF Lead-Free11/25/03Document Number: 91017 www.vishay.com1IRF520PbFDocument Number: 91017 www.vishay.com2IRF520PbFDocument Number: 91017 www.vishay.com3IRF520PbFDocument Number: 91017 www.vishay.com4IRF520PbFDocument Number: 91017 www.vishay.com5IRF520PbFDocument Number: 91017 www.vishay.com6IRF520PbFTO-220AB Package Outline

..2. Size:180K international rectifier
irf520.pdf pdf_icon

..3. Size:297K st
irf520.pdf pdf_icon

IRF520N-CHANNEL 100V - 0.115 - 10A TO-220LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDIRF520 100 V

..4. Size:201K vishay
irf520 sihf520.pdf pdf_icon

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

..5. Size:151K infineon
irf520 sihf520.pdf pdf_icon

..6. Size:229K inchange semiconductor
irf520.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FEATURESTypical R =0.27DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control ,A

0.1. Size:408K international rectifier
irf520nlpbf.pdf pdf_icon

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

0.2. Size:179K international rectifier
irf520s.pdf pdf_icon

0.3. Size:195K international rectifier
irf520s irf520spbf.pdf pdf_icon

IRF520S, SiHF520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 4.4 175 C Operating TemperatureQgd (nC) 7.7 Fast Switching Eas

0.4. Size:116K international rectifier
irf520n.pdf pdf_icon

PD - 91339AIRF520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedGDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

0.5. Size:170K international rectifier
irf520nl.pdf pdf_icon

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

0.6. Size:173K international rectifier
irf520npbf.pdf pdf_icon

PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

0.7. Size:408K international rectifier
irf520nspbf irf520nlpbf.pdf pdf_icon

0.8. Size:129K international rectifier
irf520vs.pdf pdf_icon

PD - 94306IRF520VSIRF520VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165 Fast SwitchingG Fully Avalanche RatedID = 9.6A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing t

0.9. Size:200K international rectifier
irf520v.pdf pdf_icon

PD - 94092IRF520VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165G Fast Switching Fully Avalanche RatedID = 9.6A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

0.10. Size:185K international rectifier
irf520ns.pdf pdf_icon

0.11. Size:502K st
irf520-fi irf521-fi irf522-fi irf523-fi.pdf pdf_icon

0.12. Size:243K fairchild semi
irf520a.pdf pdf_icon

IRF520AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. Source

0.13. Size:997K samsung
irf520a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

0.14. Size:1501K cn vbsemi
irf520npbf.pdf pdf_icon

IRF520NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

0.15. Size:3746K cn vbsemi
irf520ns.pdf pdf_icon

IRF520NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

0.16. Size:245K inchange semiconductor
irf520n.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF520NIIRF520NFEATURESStatic drain-source on-resistance:RDS(on) 0.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =2

0.17. Size:256K inchange semiconductor
irf520nl.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

0.18. Size:227K inchange semiconductor
irf520fi.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FIFEATURESTypical R =0.23DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control

0.19. Size:258K inchange semiconductor
irf520ns.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRF520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Другие MOSFET... IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , AO3407 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S .