IRF520 datasheet, аналоги, основные параметры
Наименование производителя: IRF520 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.2 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 450 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
Тип корпуса: TO220AB
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Аналог (замена) для IRF520
- подборⓘ MOSFET транзистора по параметрам
IRF520 даташит
..1. Size:214K international rectifier
irf520pbf.pdf 
PD - 94850 IRF520PbF Lead-Free 11/25/03 Document Number 91017 www.vishay.com 1 IRF520PbF Document Number 91017 www.vishay.com 2 IRF520PbF Document Number 91017 www.vishay.com 3 IRF520PbF Document Number 91017 www.vishay.com 4 IRF520PbF Document Number 91017 www.vishay.com 5 IRF520PbF Document Number 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline
..3. Size:297K st
irf520.pdf 
IRF520 N-CHANNEL 100V - 0.115 - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V
..4. Size:201K vishay
irf520 sihf520.pdf 
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia
..5. Size:151K infineon
irf520 sihf520.pdf 
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia
..6. Size:229K inchange semiconductor
irf520.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520 FEATURES Typical R =0.27 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control ,A
0.1. Size:408K international rectifier
irf520nlpbf.pdf 
PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53
0.3. Size:195K international rectifier
irf520s irf520spbf.pdf 
IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 4.4 175 C Operating Temperature Qgd (nC) 7.7 Fast Switching Eas
0.4. Size:116K international rectifier
irf520n.pdf 
PD - 91339A IRF520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef
0.5. Size:170K international rectifier
irf520nl.pdf 
PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
0.6. Size:173K international rectifier
irf520npbf.pdf 
PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Lead-Free Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are
0.7. Size:408K international rectifier
irf520nspbf irf520nlpbf.pdf 
PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53
0.8. Size:129K international rectifier
irf520vs.pdf 
PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.165 Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing t
0.9. Size:200K international rectifier
irf520v.pdf 
PD - 94092 IRF520V HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.165 G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to
0.10. Size:185K international rectifier
irf520ns.pdf 
PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
0.12. Size:243K fairchild semi
irf520a.pdf 
IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source
0.13. Size:997K samsung
irf520a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol
0.14. Size:1501K cn vbsemi
irf520npbf.pdf 
IRF520NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE M
0.15. Size:3746K cn vbsemi
irf520ns.pdf 
IRF520NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET
0.16. Size:245K inchange semiconductor
irf520n.pdf 
isc N-Channel MOSFET Transistor IRF520N IIRF520N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =2
0.17. Size:256K inchange semiconductor
irf520nl.pdf 
Isc N-Channel MOSFET Transistor IRF520NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100
0.18. Size:227K inchange semiconductor
irf520fi.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520FI FEATURES Typical R =0.23 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control
0.19. Size:258K inchange semiconductor
irf520ns.pdf 
Isc N-Channel MOSFET Transistor IRF520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
Другие IGBT... IRF4905L, IRF4905S, IRF510, IRF510A, IRF510S, IRF511, IRF512, IRF513, IRF9640, IRF520A, IRF520FI, IRF520N, IRF520NS, IRF521, IRF5210, IRF5210L, IRF5210S
