Справочник MOSFET. 25P10G

 

25P10G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 25P10G

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 120 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 30 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 80 ns

Выходная емкость (Cd): 790 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm

Тип корпуса: TO252

Аналог (замена) для 25P10G

 

 

25P10G Datasheet (PDF)

0.1. 25p10g.pdf Size:1652K _goford

25P10G
25P10G

GOFORD25N10GDescription The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -25A-100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High de

9.1. rfh25p08 rfh25p10 rfk25p08 rfk25p10.pdf Size:86K _njs

25P10G
25P10G

9.2. sup25p10-138.pdf Size:128K _vishay

25P10G
25P10G

SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

 9.3. sum25p10-138.pdf Size:158K _vishay

25P10G
25P10G

SUM25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

9.4. utt25p10.pdf Size:163K _utc

25P10G
25P10G

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d

 9.5. 25p10.pdf Size:1819K _goford

25P10G
25P10G

GOFORD25P10Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -25A-100V 42 Super high dense cell design Advanced trench process technology Reliable and rugged High den

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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