3205TR - описание и поиск аналогов

GOFORD 3205TR DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors VDS RDS(ON) ID are produced using high cell density trench 55V 6.6m 108A technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

SVD3205T/F/S 110A 55V N 2 SVD3205T/F/S N MOS VDMOS 1 1 3 3 T

WFP3205T WFP3205T WFP3205T WFP3205T Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 109A,60V, R (Max 8m )@V =10V DS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.5m @VGS=10V The ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce