GOFORD3205TRDESCRIPTIONThe OGFD 3205TR is the N-Channel logicenhancement mode Power field effect transistors VDS RDS(ON) IDare produced using high cell density trench55V 6.6m 108Atechnology. This high density process is especiallytailored to minimize on-state resistance.These devices are particularly suited for low voltageapplication such as cellular phone and notebookco

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

KTC3205T(BR3DG3205T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features KTA1273T(BR3CG1273T)Complementary pair with KTA1273T(BR3CG1273T). / Applications High current application. / Equivalent Circuit

SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T

SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3

WFP3205TWFP3205TWFP3205TWFP3205TSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 109A,60V, R (Max 8m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce