40P04 - описание и поиск аналогов

GOFORD 40P04 Description The 40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -40A -40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c

TK40P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P04M1 TK40P04M1 TK40P04M1 TK40P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.5 m (t

UNISONIC TECHNOLOGIES CO., LTD UTT40P04 Power MOSFET 50A, 40V P-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION 1 The UTC UTT40P04 is a P-channel power MOSFET using UTC s TO - 251 advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. 1 This UTC UTT40P04 is suitable f

SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. TO-252(D-Pack) Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme

SSD40P04-20DE -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES A Lo

Analog Power AM40P04-20DE P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36 converters and power management in portable and -40 battery-powered prod

Spec. No. C595J3 Issued Date 2010.04.19 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40V MTB40P04J3 ID -12A 40.5m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB40P04J3 TO-252 G Gate D Drain G D S S

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA

SMD Type MOSFET P-Channel MOSFET NDT40P04 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-40V ID =-40 A (VGS =-10V) 0.127 RDS(ON) 14m (VGS =-10V) +0.1 0.80-0.1 max Fully characterized avalanche voltage and current Good stability and uniformity with high EAS 1 Gate 2 Drain 2.3 0.60+ 0.1

JMTP440P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Applications -40V, -6A Load Switch RDS(ON)

JMTK440P04A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -40V, -10A Load Switch RDS(ON)

JMTQ440P04A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -40V, -8A Load Switch RDS(ON)

HTD440P04 P-1 40V P-Ch Power MOSFET Feature -40 V VDS High Speed Power Switching, Logic Level 38 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 50 RDS(on),typ VGS=7V m 100% UIS Tested, 100% Rg Tested -20 A ID (Sillicon Limited) Lead Free, Halogen Free -12 A ID (Package Limited) Application Load Switches Hard Switching and High Speed Circuit

WSF40P04 P-Ch MOSFET General Description Product Summery The WSF40P04 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -40V 32m -20A gate charge for most of the synchronous buck converter applications . Applications The WSF40P04 meet the RoHS and Green High Frequency Point-of-Load Synchro

VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View

TK40P04M www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

HM40P04K P-Channel Enhancement Mode Power MOSFET Description The HM40P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-40A RDS(ON)

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

AP40P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R