8205B - описание и поиск аналогов

GOFORD 8205B FEATURES VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) 19.5V 16m 19 m 6 A High Power and current handing capability SOT-23-6 Lead free product is acquired Surface Mount Package High Power and current handing capability Lead free product is acquired Surface Mount Package Application PWM applications Load switch Power manage

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6 VDS=19.5V,ID=6A RDS(ON)

RU8205BC6 N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, G2 RDS (ON) =11m (Typ.)@VGS=4.5V RDS (ON) =16m (Typ.)@VGS=2.5V D1/D2 Low RDS (ON) G1 Super High Dense Cell Design S2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2 Dual N-Channel MOSFET S1 SOT23-6 D1 D2 Applications Power Management G1 G2

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m @VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen

PS8205B 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205B 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205B uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This

Eternal Semiconductor Inc. ET8205B Dual N-Channel High Density Trench MOSFET (20V, 7A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 16 @ VGS = 4.5V, ID=7A 20V 7A 19 @ VGS = 2.5V, ID=5.5A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free ET8205B Pin Assignmetty & Sy

JMTM8205B Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applicatio 20V, 6A Load Switch RDS(ON)

Preliminary Datasheet LPM8205 Dual N -Channel Enhancement Power MOSFET General Description Features 100% EAS Guaranteed The LPM8205 integrates two N-Channel Green Device Available EnhancementMOSFET Transistor. It uses advanced trenchtechnology and design to provide Super Low Gate Charge excellentR with lowgate charge. This device is DS(ON) Excellent CdV/dt e

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205B S8205B Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.017 @ 4.5V 20V 6.0A 0.021 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI

VS8205BH 16V/5.5A N-Channel Advanced Power MOSFET Features V DS 16 V R DS(on),TYP@ VGS=4.5 V 28 m Enhancement mode R DS(on),TYP@ VGS=2.5 V 37 m Low on-resistance RDS(on) @ VGS=2.5 V I D 5.5 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant SOT23-6L Tape and reel Part ID Package Type Marking information VS8205BH SOT23-

VBZC8205B www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.020 at VGS = 4.5 V Available 4.8 20 RoHS* 0.032 at VGS = 2.5 V 3.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RA