Справочник MOSFET. IRF520NS

 

IRF520NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF520NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.7 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 92 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRF520NS

 

 

IRF520NS Datasheet (PDF)

 ..1. Size:185K  international rectifier
irf520ns.pdf

IRF520NS
IRF520NS

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

 ..2. Size:408K  infineon
irf520nspbf irf520nlpbf.pdf

IRF520NS
IRF520NS

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

 ..3. Size:3746K  cn vbsemi
irf520ns.pdf

IRF520NS
IRF520NS

IRF520NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

 ..4. Size:258K  inchange semiconductor
irf520ns.pdf

IRF520NS
IRF520NS

Isc N-Channel MOSFET Transistor IRF520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.1. Size:408K  international rectifier
irf520nlpbf.pdf

IRF520NS
IRF520NS

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

 7.2. Size:116K  international rectifier
irf520n.pdf

IRF520NS
IRF520NS

PD - 91339AIRF520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedGDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

 7.3. Size:170K  international rectifier
irf520nl.pdf

IRF520NS
IRF520NS

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

 7.4. Size:173K  international rectifier
irf520npbf.pdf

IRF520NS
IRF520NS

PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 7.5. Size:173K  infineon
irf520npbf.pdf

IRF520NS
IRF520NS

PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 7.6. Size:1501K  cn vbsemi
irf520npbf.pdf

IRF520NS
IRF520NS

IRF520NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M

 7.7. Size:245K  inchange semiconductor
irf520n.pdf

IRF520NS
IRF520NS

isc N-Channel MOSFET Transistor IRF520NIIRF520NFEATURESStatic drain-source on-resistance:RDS(on) 0.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =2

 7.8. Size:256K  inchange semiconductor
irf520nl.pdf

IRF520NS
IRF520NS

Isc N-Channel MOSFET Transistor IRF520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Другие MOSFET... IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRFZ44N , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 .

 

 
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