GOFORD740400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperform

AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)

N RN-CHANNEL MOSFETJCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)

AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)

AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

JSM7409BPlastic-Encapsulate MOSFETSPDFN3X3-8LDescription The JSM7409B uses advanced trench technology to 18provide excellent RDS(ON), low gate charge and operation 2736with gate voltages as low as 4.5V. 45General Features Equivalent Cir cuit VDS = -30V,ID = -25A D RDS(ON)

JSM7409P-Channel Enhancement Mode Power MOSFET PDFN3X3-8L30V P-Channel MOSFET18PRODUCT SUMMARY27VDS-30V36 ID (at VGS=-10V) -32A45 RDS(ON) (at VGS=-10V)

AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

Order this documentMOTOROLAby MJE5740/DSEMICONDUCTOR TECHNICAL DATAMJE5740*MJE5741NPN Silicon PowerMJE5742*Darlington Transistors*Motorola Preferred DeviceThe MJE5740, 41, 42 Darlington transistors are designed for highvoltage powerswitching in inductive circuits. They are particularly suited for operation in applicationsPOWER DARLINGTONsuch as:TRANSISTORS

PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 94880IRF740LCPbF Lead-Free12/10/03Document Number: 91052 www.vishay.com1IRF740LCPbFDocument Number: 91052 www.vishay.com2IRF740LCPbFDocument Number: 91052 www.vishay.com3IRF740LCPbFDocument Number: 91052 www.vishay.com4IRF740LCPbFDocument Number: 91052 www.vishay.com5IRF740LCPbFDocument Number: 91052 www.vishay.com6IRF740LCPbFDocument Nu

PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (

StrongIRFET IRFB7740PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.3m Resonant mode power supplies S OR-ing and redun

PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O

PD - 96127AIRF7404QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS DVDSS = -20Vl P Channel MOSFET2 7S Dl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.040l Lead-FreeTop ViewDescriptionThese HEXFET Power MOSFET's in packageutilize the lastest processing techniqu

PD - 94854IRFI740GPbF Lead-Free11/19/03Document Number: 91156 www.vishay.com1IRFI740GPbFDocument Number: 91156 www.vishay.com2IRFI740GPbFDocument Number: 91156 www.vishay.com3IRFI740GPbFDocument Number: 91156 www.vishay.com4IRFI740GPbFDocument Number: 91156 www.vishay.com5IRFI740GPbFDocument Number: 91156 www.vishay.com6IRFI740GPbFTO-220 Full

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2

PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli

PD - 95724IRF7401PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAA1 8l N-Channel MosfetS DVDSS = 20Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proc

PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch

PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

IRF7404TRPbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 0.04 2 7(@V = -4.5V) S DGSQg 50 nC 3 6S DID 4 5-6.7 A G D(@T = 25C)ATop View SO-8Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Frie

IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri

PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2

PD - 9.1246CIRF7404HEXFET Power MOSFET Generation V TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.040 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to a

IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

PD - 9.1244CIRF7401HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-Resistance S DVDSS = 20V2 7 N-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.022 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to

PD - 93851AIRF7402HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance 1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6S D Low Profile (

PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingte

PD - 94872IRF740PbF Lead-Free12/5/03Document Number: 91053 www.vishay.com1IRF740PbFDocument Number: 91053 www.vishay.com2IRF740PbFDocument Number: 91053 www.vishay.com3IRF740PbFDocument Number: 91053 www.vishay.com4IRF740PbFDocument Number: 91053 www.vishay.com5IRF740PbFDocument Number: 91053 www.vishay.com6IRF740PbFTO-220AB Package Outline

PD-94052BLOGIC LEVEL IRL5NJ7404HEXFET POWER MOSFET 20V, P-CHANNELSURFACE MOUNT (SMD-0.5)Product Summary Part Number BVDSS RDS(on) ID IRL5NJ7404 -20V 0.04 -11ASMD-0.5Fifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingFeatures:techniques to achieve the lowest possible on-resistancen Logic Level Gate Driveper silicon unit a

PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740 400 V

Ordering number:EN4112N-Channel Junction Silicon FET2SK1740HF amplifiers low frequency amplifiersanalog switchesFeatures Package Dimensions Adoption of FBET process.unit:mm Largeyfs.2050A Small Ciss.[2SK1740] Small-sized package permitting 2SK1740-applied0.40.16sets to be made small and slim.30 to 0.11 0.95 20.951.92.91 : Source2 :

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3740SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK)applications such as lamp drive, DC/DC converter, and actuator driv

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 0.437 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

TransistorsSwitching (600V, 7A)2SK2740FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications15

IRF740Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 450- Low area specific on-resistanceRDS(on) max. () at 25 C VGS = 10 V 0.6- Low input capacitance (Ciss)AvailableQg max. (nC) 30- Reduced capacitive switching lossesQgs (nC) 4- High body diode ruggednessQgd (nC) 7- Avalanche energy rated (U

Si7409ADNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET- 30 250.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

New ProductSi7405BDNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.013 at VGS = - 4.5 V - 16aRoHS0.017 at VGS = - 2.5 V - 12- 16a 46 nCCOMPLIANTAPPLICATIONS0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

Si7405DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.016 at VGS = 4.5 V 13 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.022 at VGS = 2.5 V 11 12COMPLIANT0.028 at VGS = 1.8 V 9.8APPL

Si7407DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFETS: 1.8 V Rated0.012 at VGS = - 4.5 V - 15.6RoHS* New Low Thermal Resistance PowerPAKCOMPLIANT0.016 at VGS = - 2.5 V - 12 - 13.5 Package with Low 1.07 mm Profile Ultra-Low RDS(on)0.

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

Si7402DNVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0057 at VGS = 4.5 V 20 TrenchFET Power MOSFET0.0067 at VGS = 2.5 V 12 18.8 New Low Thermal Resistance PowerPAK0.0085 at VGS = 1.8 V 16.5Package with Low 1.07 mm Profile Compliant to RoHS D

Si7403BDNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.074 at VGS = - 4.5 V - 8c TrenchFET Power MOSFET: 2.5 V Rated- 20 5.6 nC0.110 at VGS = - 2.5 V - 7.4 PowerPAK Package- Low Thermal Resistance- Low 1.07 mm ProfileAPPLICATIONSPowerPAK

IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

New ProductSi7405BDNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.013 at VGS = - 4.5 V - 16aRoHS0.017 at VGS = - 2.5 V - 12- 16a 46 nCCOMPLIANTAPPLICATIONS0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

Si7401DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.021 at VGS = 4.5 V 11 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.028 at VGS = 2.5 V 9.820COMPLIANT0.034 at VGS = 1.8 V 8.9APPL

IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp

Si7404DNVishay SiliconixN-Channel 30 V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.013 at VGS = 10 V 13.3 TrenchFET Power MOSFET0.015 at VGS = 4.5 V 30 12.4 Compliant to RoHS Directive 2002/95/EC0.022 at VGS = 2.5 V 10.2APPLICATIONSPowerPAK 1212-8 Li-lon

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

IRFI740G, SiHFI740GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.55f = 60 Hz) RoHS*Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Singl

Si7403DNNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETS: 2.5-V RatedVDS (V) rDS(on) (W) ID (A)D New PowerPAKt Package0.1 @ VGS = 4.5 V4.5 Low Thermal Resistance, RthJC20 Low 1.07-mm Profile0.135 @ VGS = 2.5 V 3.8APPLICATIONSD Load SwitchingD PA SwitchingS S SPowerPAKt 1212-8S3.3

IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur

IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

DMG7408SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O

DMG7401SFGP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling

DMG7401SFGQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized BVDSS RDS(ON) Max TA = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 13m @ VGS = -10V -9.8A -30V Occupies Just 33% of The Board Area Occupied by SO-8 25m

PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc

PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

BFR740EL3SiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package High

PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

BFR740L3RHSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR740L3RH is a wideband RF heterojunction bipolar transistor (HBT) available in alow profile package.Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless packageProduc

PROFET BTS 740S2Smart High-Side Power SwitchTwo Channels: 2 x 30mCurrent SenseProduct Summary PackageOperating Voltage Vbb(on) 5.0...34VP-DSO-20-9Active channels one two parallelOn-state Resistance RON 30m 15mNominal load current IL(NOM) 5.5A 8.5ACurrent limitation IL(SCr) 24A 24AGeneral Description N channel vertical power MOSFET with charge pump, ground

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

MCCMicro Commercial Components 2SC1740S-QTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC1740S-RPhone: (818) 701-49332SC1740S-SFax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC327, BC327-16,BC327-25, BC327-40Amplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS2BASERating Symbol Value UnitCollector -Emitter Voltage VCEO -45 Vdc3Collector -Base Voltage VCES -50 VdcEMITTERCollector -Emitter Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdcTotal Power D

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT

UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT7401 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reelwww.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

JANSR2N7402Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)tio

JANSR2N7404Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

JANSR2N7400Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t

JANSR2N7401August 1998 File Number 4571Formerly FSS234R46A, 250V, 0.600 Ohm, Rad Hard, FeaturesN-Channel Power MOSFET 6A, 250V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military space applications.

2N3740RDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120~270 180~390 270~560 D 15.1 15.5 E 2.9

SSF7401 -30V , -2A P-Ch Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 DESCRIPTION The SSF7401 uses advanced trench technology to ALprovide excellent on-resistance, low gate charge and 33operation with gate voltage as low as 2.5V. It can be Top View C Bused for a wide variety of

SSF7400 30V , 1.7A , RDS(ON) 85m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-323 The SSF7400 uses advanced trench technology to provide excellent on-resistance, low gate charge and ALoperation with gate voltage as low as 2.5V. It can be 33used for a wide va

TSM7401 20V N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 25 @ VGS = 4.5V 4.5 3. Source 4. Gate 20 30 @ VGS = 2.5V 3.5 5, 6, 7, 8. Drain 65 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD P

ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

QContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON PLANAR TRANSISTOR CSC 1740TO-92Plastic PackageGeneral Small Signal AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITBVCEOCollector Emitter Voltage 50(ORS) V40(E)BVCBOCollector Base Voltage 60(ORS) V50(E)B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N67402N6740 NPN PLASTIC POWER TRANSISTORHigh Voltage and Power Supplies Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3 F 3.75

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors2SC1740S TRANSISTOR (NPN)TO-92S FEATURES 1. EMITTERLow Cob2. COLLECTOR3. BASE Equivalent Circuit C1740C1740=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION With TO-220 package Complement to type 2SC1448 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP

CEP740A/CEB740ACEF740AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP740A 400V 0.55 10A 10VCEB740A 400V 0.55 10A 10VCEF740A 400V 0.55 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(D

CEP740G/CEB740G CEF740GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP740G 400V 0.55 10A 10VCEB740G 400V 0.55 10A 10VCEF740G 400V 0.55 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIEST

CED740A/CEU740AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES400V, 9A, RDS(ON) = 0.55 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

2SC1740S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low CobMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction Te

2SA1740SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B4.41.61 1.81.41.43. EMITTER 2 2.64.253 2.43.75Features 0.8MIN0.530.40 0.48High breadown voltage 0.442x)0.13 B0.35 0.371.5 Excellent hFE linearlity 3.0Dimensions in inches and (millimeters)Marking: AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo

AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)

AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)

AO740130V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7401 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

AO7403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7403 uses advanced trench technology to provide VDS (V) = -20Vexcellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V)voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)

AO740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7400 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)

AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)

AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)

AO740820V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7408 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)

AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

AONS77402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 335A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

AO740530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7405 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

AO7404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7404 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)

AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

AO740720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7407 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

Analog Power AM7401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)140 @ VGS = -10V -4.9 Low thermal impedance -150150 @ VGS = -5.5V -4.8 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM7406NAN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3 @ VGS = 4.5V34 Low thermal impedance 304.2 @ VGS = 2.5V29 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

Analog Power AM7402NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)8.5 @ VGS = 10V20 Low thermal impedance 3016 @ VGS = 4.5V15 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

Analog Power AM7408NAN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5 @ VGS = 4.5V26 Low thermal impedance 306.9 @ VGS = 2.5V22 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

Analog Power AM7404NAN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.8 @ VGS = 10V35 Low thermal impedance 304 @ VGS = 4.5V29 Fast switching speed Typical Applications: DFN5X6-8L Synchronous Buck DC/DC Conversion Synchronous Rectification Power Routing and ORing ABSOL

Analog Power AM7403PP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)220 @ VGS = -10V -4.0 Low thermal impedance -200235 @ VGS = -5.5V -3.9 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM7400NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)2.5 @ VGS = 10V36.6 Low thermal impedance 304 @ VGS = 4.5V28.9 Fast switching speed DFN5X6-8L Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe

AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7400, N-Channel enhancement mode 30V/3.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=102m@VGS=2.5V These devices are particularly suited for low Supe

N RN-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson-max(@Vgs=10V) 0.54 Qg 19.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

2SC1740M(BR3DG1740M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , 2SA933M(BR3CG933M)Small base output capacitance, complementary pair with 2SA933M(BR3CG933M). / Applications General purpose a

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

BRI740 Rev.A Sep.-2023 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices are well su

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1740 APPLICATIONS Medium Seed switching ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited f

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS740 A0H General Description VDSS 400 V CS740 A0H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7401FeaturesGeneration V TechnologyUltra Low On-ResistanceN-Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit10 Sec. Pulsed Drain Current, VGS @4.5V,Ta =25 ID 10Continuous Drain Current, VGS @4.5V,Ta =25 ID 8.7AContinuous D

SMD Type MOSFETN-Channel MOSFETAO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1 Gate2 SourceG3 DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 12

SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15

SMD Type TransistorsPNP Transistors2SA1740SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC45480.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

SVF740CT 10A400V N 2SVF740CT N MOS F-cellTM VDMOS 1 3

SVF740T/MJ 10A400V N 2SVF740T/MJ N MOS 1213 F-CellTM VDMOS 3TO-251J-3L 1. 2. 3.

SFF740SFF740SFF740SFF740Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,400V,R (Max 0.55)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 60nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using

SFP740SFP740SFP740SFP740Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,400V,R (Max 0.55)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using

WFF740WFF740WFF740WFF740Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,400V,R (Max 0.55)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 60nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using

WFP740WFP740WFP740WFP740Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,400V,R (Max 0.55)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 60nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using

PPJC7406 20V N-Channel Enhancement Mode MOSFET SOT-323 Unit : inch(mm)20 V 1.3A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.3A

PPJC7403 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm)Voltage -20 V Current -0.7A Features RDS(ON) , VGS@-4.5V, ID@-0.7A

PPJC7404 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm) 20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A

PPJC7401 30V P-Channel Enhancement Mode MOSFET SOT-323 Unit : inch(mm)Voltage -30 V Current -1.5A Features RDS(ON) , VGS@-10V, ID@-1.5A

PPJT7408 20V N-Channel Enhancement Mode MOSFET SOT-363 Unit : inch(mm)20 V 1.9A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.9A

PPJC7400 30V N-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm)30 V 1.9A Voltage Current Features RDS(ON) , VGS@10V, ID@1.9A

PPJC7407 20V P-Channel Enhancement Mode MOSFET SOT-323 Unit: inch(mm)Voltage -20 V Current -1.3A Features RDS(ON) , VGS@-4.5V, ID@-1.3A

AiT Semiconductor Inc. AM7408 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM7408 is available in a DFN8 (3x3) package. 30V/23A, R = 21m(max.) @ V = 10V DS(ON) GSR = 30m(max.) @ V = 4.5V DS(ON) GS Provide Excellent Q x R gd DS(ON) Reliable and Rugged 100% UIS Tested Available in a DFN8 (3x3) package. ORDERING INFO

BLV740 N-channel Enhancement Mode Power MOSFET 400V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.55 Simple Drive Requirements ID 10ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unles

CHENMKO ENTERPRISE CO.,LTDCHM7402WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.4 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.

CHENMKO ENTERPRISE CO.,LTDCHM7401WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTDCHM740ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

CHENMKO ENTERPRISE CO.,LTDCHM7400SGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* Super high dense cell design for extremely low RDS(ON). * High power and current handing c

CHENMKO ENTERPRISE CO.,LTDCHM7407WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

CHENMKO ENTERPRISE CO.,LTDCHM7400WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.

Single N-channel MOSFETELM17400FA-SGeneral description Features ELM17400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V)with gate voltages as low as 2.5V. Rds(on)

Single P-channel MOSFETELM17401FA-SGeneral description Features ELM17401FA-S uses advanced trench technology Vds=-30Vto provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V)operation with gate voltages as low as 2.5V. Rds(on)

Single N-channel MOSFETELM17408GA-SGeneral description Features ELM17408GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V)with gate voltages as low as 1.8V. Rds(on)

N N-CHANNEL MOSFET FHP740C MAIN CHARACTERISTICS FEATURES ID 10A Low gate charge VDSS 400V Crss ( 2.8pF) Low Crss (typical 2.8pF ) Rdson-typ @Vgs=10V 0.53 Fast switching Qg-typ 15.7nC 100% 100% avalanche tested dv/dt Improved dv

N N-CHANNEL MOSFET FHP740A MAIN CHARACTERISTICS FEATURES ID 11A Low gate charge VDSS 400V Crss ( 2.8pF) Low Crss (typical 2.8pF ) Rdson-typ @Vgs=10V 0.53 Fast switching Qg-typ 15.7nC 100% 100% avalanche tested dv/dt Improved dv

FHP740FHP740N MOSAC-DC HPMWDC-DC 7A,400V,RDS(on)(0.51 TC=25 VDSS 400 V

2SC1740M(3DG1740M) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. :, 2SA933M(3CG933M) Features: Small base output capacitance, complementary pair with 2SA933M(3CG933M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V

GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m@VGS=1.8V Super high density cell design for extremely These devices a

GSM7400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7400, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A , RDS(ON)= 90m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A , RDS(ON)= 102m@VGS=2.5V Super high density cell design for extremely These devices a

IRF740(CS740) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)

IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

IRF740S(CS740S) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)

2SC1740S(3DG1740S) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. :, 2SA933AS(3CG933AS) Features: Small base output capacitance, complementary pair with 2SA933AS(3CG933AS). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60

LEAD FREEPbRoHSSLP740UZ/SLF740UZSLP740UZ/SLF740UZ430V N-Channel MOSFETGeneral Description Features- 11A, 430V, RDS(on)typ. = 0.53@VGS = 10 V- Low gate charge ( typical 15.7nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced planar stripe DMOS technology. - Fast switchingFast switchingThis advanced technology has been especially tailored

LEAD FREEPbRoHS SLD740UZ400V N-Channel MOSFETGeneral Description Features - 11A, 400V, RDS(on)typ. = 0.55@VGS = 10 V - Low gate charge ( typical 23nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced trench MOSFET technology. - Fast switchingThis advanced technology has been especially tailored - 100% avalanche testedto minimize on-sta

MMP7401Package Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mFeaturesAdvanced trench process technologyHigh Density Cell DesignGeneral ApplicationSOT- 23 / SC59 Internal Schematic DiagramTop View P-Channel M

MMN7402Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@2.8A = 60mRDS(ON), Vgs@2.5V, Ids@2.0A = 115mRDS(ON), Vgs@1.8V, Ids@2.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top

SW740D N-channel Enhanced mode TO-220/TO-220F MOSFET Features BVDSS : 400V TO-220 TO-220F ID : 10A High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10V RDS(ON) : 0.4 Low Gate Charge (Typ 35nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 Application: LED, DC-DC 3 1. Gate 2. Drain 3. Source General Description

SW740DN-channel Enhanced mode TO-220/TO-220F/TO-252 MOSFETFeaturesBVDSS : 400VTO-220TO-220F TO-252ID : 10A High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10VRDS(ON) : 0.4 Low Gate Charge (Typ 35nC)2 Improved dv/dt Capability 11 1 100% Avalanche Tested212 23 Application: LED, DC-DC 3 31. Gate 2. Drain 3. SourceGeneral Description 3

Sep 2011BVDSS = 400 VRDS(on) typ HFP740ID = 10.5 A400V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lowe

Sep 2011BVDSS = 400 VRDS(on) typ HFS740ID = 10.5 A400V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lo

STP7407 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP7407 is the P-Channel logic -20V/-3.4A, RDS(ON) =88m(typ.)@VGS =-4.5V enhancement mode power field effect transistor is -20V/-2.4A, RDS(ON) =110m(typ.)@VGS =-2.5V produced using high cell density. advanced trench -20V/-1.7A, RDS(ON) =150m(typ.)@VGS =-1.8V technology to provide excellen

ST7400 N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb

STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction

TSP740MR/TSF740MR 400V N-Channel MOSFETGeneral Description Features- 10.5A, 400V, RDS(on)typ. = 0.46@VGS = 10VThis Power MOSFET is produced using Truesemis - Low gate charge ( typical 15.7nC)advanced planar stripe DMOS technology. - High ruggednessThis advanced technology has been especially tailored - Fast switchingto minimize on-state resistance, provide superior sw

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDP-Channel Enhancement Mode Power MOSFET 7409PDFN3X3-8L30V P-Channel MOSFET18PRODUCT SUMMARY27VDS-30V36 ID (at VGS=-10V) -32A45 RDS(ON) (at VGS=-10V)

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDPDFN 3x3 Plastic-Encapsulate MOSFETS 7409BP-Channel Enhancement Mode Power MOSFET PDFN3X3-8LDescription The 7409B uses advanced trench technology to provide 18excellent RDS(ON), low gate charge and operation with gate 2736voltages as low as 4.5V. 45General Features Equivalent Cir cuit VDS = -30V,ID = -25A

TW7404FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, Synchronus Rectification in DC/DC and AC/DC Converters ID = 83.5A Industrial and Motor Drive applications RDS(ON) @VGS= 10V, TYP 2.5m RDS(ON) @VGS= 4.5V, TYP 3.3m Pin Configurations DFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted APara

TW7408FNN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 30V, load switch ID = 68A battery protection applications RDS(ON) @VGS= 10V, TYP 2.9m RDS(ON) @VGS= 4.5V, TYP 4.8m Pin Configurations TDFN3.3*3.3-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Voltage

TW7407FL-YP-Channel Enhancement Mode Power MOSFET Features General Description VDS = -30V, DC/DC Converters in Computing, Servers, and POL ID = -50A Isolated DC/DC Converters in Telecom and Industrial RDS(ON) @VGS= -10V, TYP 6m RDS(ON) @VGS= -4.5V, TYP 10.3m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401U 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401P 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene

AO7401www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

AO7400www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP

IRF7404TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

AO7407www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

A O7 4 07P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeAO7407 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C unless ot

740 / 740F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche

isc Silicon PNP Power Transistor 2SA740DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplementary to Type 2SC1448Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor IRFB7740IIRFB7740FEATURESStatic drain-source on-resistance:RDS(on) 7.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740FEATURESStatic drain-source on-resistance:RDS(on)7.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

isc Silicon NPN Power Transistor 2N6740DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , power switc-hing in inductive circuit , they are particularly suited for

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION With TO-220 package High voltage ratings Low collector saturation voltage Fast switching speed APPLICATIONS Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION1 Base Co

isc Silicon PNP Power Transistor 2N3740ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -

isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRF740FIDESCRIPTIONDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltag

isc N-Channel MOSFET Transistor 2SK3740FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL

isc Silicon NPN Power Transistor 2SC2740DESCRIPTIONCollector-Emitter Sustaining Voltage-:V = 400V(Min)CEO(SUS)High Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc N-Channel MOSFET Transistor IRF740FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A Wide Area of Safe Operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RA

isc N-Channel MOSFET Transistor IRFU7740FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN