GOFORD8N60ADescription Features VDSS RDS(ON) ID @10V (typ) 8.5A600V 0.94 Fast switching 100% avalanche tested Improved dv/dt capability Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Un

VCES = 600VGenX3TM 600V IGBTIXGH48N60A3D1w/Diode IC110 = 48AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 V G = Gate C = CollectorE = Emitter Tab = Colle

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

IXGA48N60A3 VCES = 600VGenX3TM 600VIXGP48N60A3IGBTs IC110 = 48AIXGH48N60A3VCE(sat) 1.35VUltra Low Vsat PT IGBTs forTO-263 (IXGA)up to 5kHz switchingGESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC =

N N-CHANNEL MOSFET FHP8N60A /FHF8N60A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 15pF) Low Crss (typical 15pF ) Rdson-typ@Vgs=10V 0.9 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improved dv/dt

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

NCEAP018N60AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =270A (Silicon Limited)DS DThe NCEAP018N60AGU uses Super Trench II technology that isR =1.4 m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =4.5VDS(ON) GSswitching perfor

http://www.ncepower.com NCEP028N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP028N60AGU uses Super Trench II technology that V =60V,I =100ADS Dis uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5VDS(ON) GSswitching

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS8N60 A8H General Description VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor c