8N60AF - описание и поиск аналогов

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 w/Diode IC110 = 48A VCE(sat) 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector E = Emitter Tab = Colle

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =

GOFORD 8N60A Description Features VDSS RDS(ON) ID @ 10V (typ) 8.5A 600V 0.94 Fast switching 100% avalanche tested Improved dv/dt capability Application High frequency switching mode power supply Uninterruptible Power Supply (UPS) Electronic ballast Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Un

N N-CHANNEL MOSFET FHP8N60A /FHF8N60A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 15pF) Low Crss (typical 15pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improved dv/dt

NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi

NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor

http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS8N60 A8H General Description VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor c