7N65AF - описание и поиск аналогов

7N65A/7N65AF GOFORD Description Features - VDSS RDS(ON) ID @ 10V (typ) 7.5A 650V 1 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220

OSG07N65AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

VS7N65AF 650V/7A N-Channel Advanced Power MOSFET V DS 650 V Features R DS(on),TYP@ VGS=10V 1.1 N-Channel 10V Logic Level Control I D 7 A Enhancement mode TO-220F Low on-resistance RDS(on) @ VGS=10V Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS7N65AF TO-220F 7N65AF 50pcs/Tube

UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high ef

CEP07N65A/CEB07N65A CEF07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP07N65A 650V 1.45 7A 10V CEB07N65A 650V 1.45 7A 10V CEF07N65A 650V 1.45 7A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE

CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

CED07N65A/CEU07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 6A, RDS(ON) = 1.45 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc =

BL7N65A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL7N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

N N-CHANNEL MOSFET FHP7N65A /FHF7N65A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

ATM7N65ATE N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 8A DESCRIPTION The ATM7N65ATE is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high spe

VS7N65AD 660V/7A N-Channel Advanced Power MOSFET V DS 660 V Features R DS(on),TYP@ VGS=10 V 1.1 N-Channel 10V Logic Level Control I D 7 A Enhancement mode TO-252 Low on-resistance RDS(on) @ VGS=10 V Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS7N65AD TO-252 7N65AD 2500pcs/

HMS47N65A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industry s ID A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features