G7N65 - описание и поиск аналогов

GOFORD G7N65 Description Features VDSS RDS(ON) ID @ 10V (typ) 7.5 A 650V 1 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO

DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) Max High BV Rating for Power Application DSS T = +25 C C Low Input Capacitance 650V 1.4 @ V = 10V 5.5A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automot

DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4 @VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application DSS T = +25 C C Low Input/Output Leakage 650V 1.4 @V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo

LNC7N65D LND7N65D LNG7N65D LNH7N65D LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo

isc N-Channel MOSFET Transistor DMG7N65SJ3 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

isc N-Channel MOSFET Transistor DMG7N65SCTI FEATURES Drain Current I = 7.7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

isc N-Channel MOSFET Transistor DMG7N65SCT FEATURES Drain Current I = 7.7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

7N65 650V N-Channel Power MOSFET RDS(ON)