Справочник MOSFET. IRF5210L

 

IRF5210L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF5210L

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 200 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 40 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 120 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm

Тип корпуса: TO262

Аналог (замена) для IRF5210L

 

 

IRF5210L Datasheet (PDF)

1.1. irf5210lpbf irf5210spbf.pdf Size:310K _international_rectifier

IRF5210L
IRF5210L

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150°C Operating Temperature l Fast Switching RDS(on) = 60mΩ l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150°C

3.1. auirf5210s.pdf Size:236K _international_rectifier

IRF5210L
IRF5210L

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

3.2. irf5210.pdf Size:125K _international_rectifier

IRF5210L
IRF5210L

PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

 3.3. irf5210pbf.pdf Size:189K _international_rectifier

IRF5210L
IRF5210L

PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.06Ω l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

3.4. irf5210s.pdf Size:186K _international_rectifier

IRF5210L
IRF5210L

PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

 3.5. irf5210spbf.pdf Size:206K _inchange_semiconductor

IRF5210L
IRF5210L

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210SPBF ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... IRF513 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF540 , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A .

 

 
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MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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