2SK3674-01SJ - аналоги, параметры транзистора

2SK3674-01SJ даташит

..1. Size:357K inchange semiconductor
2sk3674-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

3.1. Size:357K inchange semiconductor
2sk3674-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01S FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

4.1. Size:270K fuji
2sk3674-01l-s-sj.pdf pdf_icon

2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

4.2. Size:283K inchange semiconductor
2sk3674-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

Другие MOSFET... 2SK1363 , 2SK2196 , 2SK2806-01 , 2SK3455 , 2SK3455B , 2SK3534-01MR , 2SK3674-01L , 2SK3674-01S , AON6380 , 2SK3899 , FTK9451 , FTK9452 , FTK03N10 , FTK100N10P , FTK1013 , FTK1016 , FTK1090 .