IRF522 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF522
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 15(max) nC
trⓘ - Время нарастания: 70(max) ns
Cossⓘ - Выходная емкость: 400(max) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO220
IRF522 Datasheet (PDF)
irf5210lpbf irf5210spbf.pdf
PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C
irf520pbf.pdf
PD - 94850IRF520PbF Lead-Free11/25/03Document Number: 91017 www.vishay.com1IRF520PbFDocument Number: 91017 www.vishay.com2IRF520PbFDocument Number: 91017 www.vishay.com3IRF520PbFDocument Number: 91017 www.vishay.com4IRF520PbFDocument Number: 91017 www.vishay.com5IRF520PbFDocument Number: 91017 www.vishay.com6IRF520PbFTO-220AB Package Outline
irf520nlpbf.pdf
PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53
irf520s irf520spbf.pdf
IRF520S, SiHF520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 4.4 175 C Operating TemperatureQgd (nC) 7.7 Fast Switching Eas
irf5210.pdf
PD - 91434AIRF5210HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-
irf5210pbf.pdf
PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irf5210s.pdf
PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
irf520n.pdf
PD - 91339AIRF520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedGDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef
irf520nl.pdf
PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low
irf520npbf.pdf
PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
auirf5210s.pdf
AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc
irf520vs.pdf
PD - 94306IRF520VSIRF520VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165 Fast SwitchingG Fully Avalanche RatedID = 9.6A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing t
irf520v.pdf
PD - 94092IRF520VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165G Fast Switching Fully Avalanche RatedID = 9.6A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to
irf520ns.pdf
PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low
irf520.pdf
IRF520N-CHANNEL 100V - 0.115 - 10A TO-220LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDIRF520 100 V
irf520a.pdf
IRF520AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. Source
irf520a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
irf520 sihf520.pdf
IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia
irf5210pbf.pdf
PD - 95408IRF5210PbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.06l P-ChannelGl Fully Avalanche RatedID = -40Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi
irf5210spbf irf5210lpbf.pdf
PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C
irf520npbf.pdf
PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
irf520nspbf irf520nlpbf.pdf
PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53
irf520 sihf520.pdf
IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia
auirf5210s.pdf
AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical
irf520npbf.pdf
IRF520NPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE M
irf520ns.pdf
IRF520NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET
irf5210spbf.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
irf5210.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extreme
irf520.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FEATURESTypical R =0.27DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control ,A
irf520n.pdf
isc N-Channel MOSFET Transistor IRF520NIIRF520NFEATURESStatic drain-source on-resistance:RDS(on) 0.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =2
irf520nl.pdf
Isc N-Channel MOSFET Transistor IRF520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
irf520fi.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FIFEATURESTypical R =0.23DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control
irf520ns.pdf
Isc N-Channel MOSFET Transistor IRF520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF840 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N .
Список транзисторов
Обновления
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