Справочник MOSFET. IRF5305L

 

IRF5305L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF5305L

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 110 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 31 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 42 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm

Тип корпуса: TO262

Аналог (замена) для IRF5305L

 

 

IRF5305L Datasheet (PDF)

1.1. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF5305L
IRF5305L

PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

3.1. irf5305.pdf Size:124K _international_rectifier

IRF5305L
IRF5305L

PD - 91385B IRF5305 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

3.2. irf5305pbf.pdf Size:182K _international_rectifier

IRF5305L
IRF5305L

PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 3.3. irf5305s.pdf Size:171K _international_rectifier

IRF5305L
IRF5305L

PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175°C Operating Temperature RDS(on) = 0.06Ω Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

3.4. irf5305.pdf Size:241K _inchange_semiconductor

IRF5305L
IRF5305L

isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab

Другие MOSFET... IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , 2N7000 , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 .

 

 
Back to Top