FTK7510P - аналоги и даташиты транзистора

 

FTK7510P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FTK7510P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15.6 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FTK7510P

   - подбор ⓘ MOSFET транзистора по параметрам

 

FTK7510P Datasheet (PDF)

 7.1. Size:388K  first silicon
 ftk7510 1.pdf pdf_icon

FTK7510P

SEMICONDUCTOR FTK7510F/PTECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P : High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 12 Avalanche Energy 100% test 3TO-220Description: The FTK7510 is a new generation of middle voltag

 7.2. Size:327K  first silicon
 ftk7510.pdf pdf_icon

FTK7510P

SEMICONDUCTOR FTK7510 TECHNICAL DATAFeathers: ID=75A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=10mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK7510 is a new generation of middle voltage and high current N

 9.1. Size:366K  first silicon
 ftk75n75.pdf pdf_icon

FTK7510P

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

 9.2. Size:566K  first silicon
 ftk7509.pdf pdf_icon

FTK7510P

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FTK7002U , FTK70N06 , FTK730F , FTK730P , FTK7328 , FTK7509 , FTK7510 , FTK7510F , IRFB4110 , FTK6014 , FTK6014A , FTK60N04D , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 .

 

 
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