FTK1216. Аналоги и основные параметры

Наименование производителя: FTK1216

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 12 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 680 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm

Тип корпуса: DFNWB2X2-6L

Аналог (замена) для FTK1216

- подборⓘ MOSFET транзистора по параметрам

 

FTK1216 даташит

 ..1. Size:507K  first silicon
 ftk1216.pdf pdf_icon

FTK1216

SEMICONDUCTOR FTK1216 TECHNICAL DATA P-Channel MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on) MAX 21m @-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m @-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa

 9.1. Size:585K  first silicon
 ftk1206.pdf pdf_icon

FTK1216

SEMICONDUCTOR FTK1206 TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-J ID V(BR)DSS RDS(on)MAX m @-4.5V 45 1. DRAIN m -12V 60 -6A 2. DRAIN @-2.5V 3. GATE m @-1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

 9.2. Size:362K  first silicon
 ftk12n10s.pdf pdf_icon

FTK1216

SEMICONDUCTOR FTK12N10S TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION SOP-8 The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES D D D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

 9.3. Size:360K  first silicon
 ftk123.pdf pdf_icon

FTK1216

SEMICONDUCTOR FTK123 TECHNICAL DATA N-CHANNEL POWER MOSFET 3 2 1 DEVICE MARKING AND ORDERING INFORMATION SOT -23 Device Marking Shipping FTK123LT1G SA 3000/Tape&Reel Drain 3 FTK123LT3G SA 10000/Tape&Reel 1 MAXIMUM RATINGS Gate Rating Symbol Value Unit 2 Drain Source Voltage VDSS 100 Vdc Source Gate Source Voltage Continuous VGS 20 Vdc Non repetitive (tp

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FTK5N50D, FTK5N80DD, FTK5N80F, FTK5N80P, FTK50N03D, FTK50N06P, FTK1206, FTK1208, K4145, FTK12N10S, FTK12N65DD, FTK12N65F, FTK12N65P, FTK138, FTK138D, FTK138U, FTK15N10D