FTK1216 - параметры транзистора MOSFET, его аналоги, datasheet

FTK1216 Datasheet (PDF)

..1. Size:507K first silicon
ftk1216.pdf pdf_icon

SEMICONDUCTORFTK1216TECHNICAL DATAP-Channel MOSFET DFNWB22-6L-JIDV(BR)DSS RDS(on) MAX 21m@-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m@-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa

9.1. Size:585K first silicon
ftk1206.pdf pdf_icon

SEMICONDUCTORFTK1206TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V 451. DRAIN m-12V 60 -6A 2. DRAIN @-2.5V3. GATE m@-1.8V904. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

9.2. Size:362K first silicon
ftk12n10s.pdf pdf_icon

SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

9.3. Size:360K first silicon
ftk123.pdf pdf_icon

SEMICONDUCTORFTK123TECHNICAL DATAN-CHANNEL POWER MOSFET321DEVICE MARKING AND ORDERING INFORMATIONSOT -23Device Marking ShippingFTK123LT1G SA 3000/Tape&ReelDrain3FTK123LT3G SA 10000/Tape&Reel1MAXIMUM RATINGS GateRating Symbol Value Unit2DrainSource Voltage VDSS 100 VdcSourceGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp