FTK12N10S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTK12N10S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 590 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: SOP8
FTK12N10S Datasheet (PDF)
ftk12n10s.pdf
SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul
ftk12n65p f dd.pdf
SEMICONDUCTORFTK12N65P/F/DDTECHNICAL DATA12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulsei
ftk1206.pdf
SEMICONDUCTORFTK1206TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V 451. DRAIN m-12V 60 -6A 2. DRAIN @-2.5V3. GATE m@-1.8V904. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita
ftk123.pdf
SEMICONDUCTORFTK123TECHNICAL DATAN-CHANNEL POWER MOSFET321DEVICE MARKING AND ORDERING INFORMATIONSOT -23Device Marking ShippingFTK123LT1G SA 3000/Tape&ReelDrain3FTK123LT3G SA 10000/Tape&Reel1MAXIMUM RATINGS GateRating Symbol Value Unit2DrainSource Voltage VDSS 100 VdcSourceGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp
ftk1216.pdf
SEMICONDUCTORFTK1216TECHNICAL DATAP-Channel MOSFET DFNWB22-6L-JIDV(BR)DSS RDS(on) MAX 21m@-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m@-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa
ftk1208.pdf
SEMICONDUCTORFTK1208TECHNICAL DATAP-Channel MOSFET IDV(BR)DSS RDS(on) MAXDFNWB2 2-6L-J 28m@-4.5V 32m@-3.7V -8A40m@-2.5V-12V63m@-1.8V 150m@-1.5VFEATURE APPLICATION PWM application Advanced trench MOSFET process technology Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalen
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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