Справочник MOSFET. FTK4N60F

 

FTK4N60F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FTK4N60F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 106 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FTK4N60F

   - подбор ⓘ MOSFET транзистора по параметрам

 

FTK4N60F Datasheet (PDF)

 7.1. Size:171K  first silicon
ftk4n60p f d i.pdfpdf_icon

FTK4N60F

SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua

 8.1. Size:381K  first silicon
ftk4n65p f d i.pdfpdf_icon

FTK4N60F

SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

 9.1. Size:398K  first silicon
ftk4n70p f d i.pdfpdf_icon

FTK4N60F

SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used

Другие MOSFET... FTK2N60F , FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I , FTK2N65P , FTK4N60D , IRFZ46N , FTK4N60I , FTK4N60P , FTK4N65D , FTK4N65F , FTK4N65I , FTK4N65P , FTK4N70D , FTK4N70F .

History: AP4610P | IPB65R150CFD | AP3989R | CMUDM7004 | APT1201R4SFLL | FHP20N60A | 2SK2329S

 

 
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