FTK4N65F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FTK4N65F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 60 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
FTK4N65F Datasheet (PDF)
ftk4n65p f d i.pdf

SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
ftk4n60p f d i.pdf

SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua
ftk4n70p f d i.pdf

SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRLI640GPBF | HSU4006
History: IRLI640GPBF | HSU4006



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