Справочник MOSFET. FTK2302

 

FTK2302 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FTK2302
   Маркировка: N02
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для FTK2302

 

 

FTK2302 Datasheet (PDF)

 ..1. Size:247K  first silicon
 ftk2302.pdf

FTK2302 FTK2302

SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I

 8.1. Size:420K  first silicon
 ftk2306a.pdf

FTK2302 FTK2302

SEMICONDUCTOR FTK2306ATECHNICAL DATAN-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m@10V30V3.16A65m@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

 8.2. Size:281K  first silicon
 ftk2304.pdf

FTK2302 FTK2302

SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)

 8.3. Size:344K  first silicon
 ftk2306.pdf

FTK2302 FTK2302

SEMICONDUCTOR FTK2306TECHNICAL DATADDESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagramGENERAL FEATURES D VDS = 30V,ID = 5A 3RDS(ON)

 8.4. Size:284K  first silicon
 ftk2301.pdf

FTK2302 FTK2302

SEMICONDUCTORFTK2301TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance2R =4.5V, I =2.8A ) = 100mDS(ON) (VGS ds1R =2.5V, I =2.0A ) = 150mDS(ON) (VGS dsSOT 23 (TO236AB)High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM3D We declare that

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