SEMICONDUCTORFTK2324TECHNICAL DATAN-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 234m@10V100V 267m@ 6V 2A1. GATE 278m@4.5V 2. SOURCE 3. DRA N FEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25 unless

SEMICONDUCTORFTK2341ETECHNICAL DATADESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

SEMICONDUCTOR FTK2306ATECHNICAL DATAN-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m@10V30V3.16A65m@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)

SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I

SEMICONDUCTORFTK2310TECHNICAL DATAFTK2310 N-Channel MOSFET DGDESCRIPTIONThe FTK2310 uses advanced trench technology to provide excellent SSchematic diagram RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. D3This device is suitable for use as a battery protection or in other switching S10application. G 1 2 SMarking and pin Assignment F

SEMICONDUCTORFTK2312TECHNICAL DATA DDESCRIPTIONThe FTK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagramGENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

SEMICONDUCTORFTK2333TECHNICAL DATAP-channel MOSFET DESCRIPTION DThe FTK2333 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asG a load switch applications.SGENERAL FEATURES Schematic diagram IDV(BR)DSS RDS(on) MAX 28m@ -4.5V 32m@-3.7V S33-6A4

SEMICONDUCTOR FTK2306TECHNICAL DATADDESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagramGENERAL FEATURES D VDS = 30V,ID = 5A 3RDS(ON)

SEMICONDUCTORFTK2301TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance2R =4.5V, I =2.8A ) = 100mDS(ON) (VGS ds1R =2.5V, I =2.0A ) = 150mDS(ON) (VGS dsSOT 23 (TO236AB)High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM3D We declare that