FTK4435 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTK4435
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 215 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: SOP8
FTK4435 Datasheet (PDF)
ftk4435.pdf
SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)
ftk4438.pdf
SEMICONDUCTOR FTK4438TECHNICAL DATADESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switchor in PWM applications.Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 60V, ID = 8.2A RDS(ON)
ftk4414.pdf
SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)
ftk4410d.pdf
SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0
ftk4406.pdf
SEMICONDUCTOR FTK4406TECHNICAL DATAN-Channel Power MOSFETSOP-8DESCRIPTION The FTK4406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).DThe device is ideal for load switch and battery protection applications D D D8 57 6APPLICATIONS 1 2 3 4 Battery protection applicationsS S GS Load switch MARKING Q44
ftk4407.pdf
SEMICONDUCTOR FTK4407TECHNICAL DATAP-Channel Power MOSFETDESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).The device is ideal for load switch and battery protection applications D D D D8 7 6 5APPLICATIONS Battery protection applications1 2 3 4S S S G Load switch MARKING Q440
ftk4409.pdf
SEMICONDUCTORFTK4409TECHNICAL DATASmall Signal MOSFET25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323Features Advance Planar Technology for Fast Switching, Low RDS(on)3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 21SOT 323Applications Boost and Buck Converter Load Switch Battery ProtectionV(BR)DSS RDS(on) T
ftk4410.pdf
SEMICONDUCTOR FTK4410TECHNICAL DATADESCRIPTION N-Channel MOSFETThe FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 30V,I = 7.5A DRDS(ON)
ftk4459.pdf
SEMICONDUCTOR FTK4459TECHNICAL DATA DDESCRIPTION The FTK4459 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -6.5A RDS(ON)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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