FTK4435 - описание и поиск аналогов

 

Аналоги FTK4435. Основные параметры


   Наименование производителя: FTK4435
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 215 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для FTK4435

   - подбор ⓘ MOSFET транзистора по параметрам

 

FTK4435 даташит

 ..1. Size:423K  first silicon
ftk4435.pdfpdf_icon

FTK4435

SEMICONDUCTOR FTK4435 TECHNICAL DATA D DESCRIPTION The FTK4435 uses advanced trench technology to G provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

 8.1. Size:496K  first silicon
ftk4438.pdfpdf_icon

FTK4435

SEMICONDUCTOR FTK4438 TECHNICAL DATA DESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 VDS = 60V, ID = 8.2A RDS(ON)

 9.1. Size:231K  first silicon
ftk4414.pdfpdf_icon

FTK4435

SEMICONDUCTOR FTK4414 TECHNICAL DATA D DESCRIPTION The FTK4414 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D D D D VDS = 30V,ID = 8.5A 8 7 6 5 RDS(ON)

 9.2. Size:505K  first silicon
ftk4410d.pdfpdf_icon

FTK4435

SEMICONDUCTOR FTK4410D TECHNICAL DATA N-Channel MOSFET A I DESCRIPTION C J The FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERS This device is suitable for use as a load switch A 6 50 0 2 B 5 60 0 2 or in PWM applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0

Другие MOSFET... FTK40N10D , FTK40P04D , FTK4406 , FTK4407 , FTK4409 , FTK4410 , FTK4410D , FTK4414 , STP75NF75 , FTK4438 , FTK4459 , FTK4503 , FTK4604 , FTK4703 , FTK4822 , FTK4828 , FTK4828D .

History: AGM10N15R | AO4882

 

 
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