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2SJ463A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ463A

Маркировка: H21

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 0.15 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 0.1 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 330 ns

Выходная емкость (Cd): 15 pf

Сопротивление сток-исток открытого транзистора (Rds): 13 Ohm

Тип корпуса: SC70

Аналог (замена) для 2SJ463A

 

 

2SJ463A Datasheet (PDF)

1.1. 2sj463a.pdf Size:246K _renesas

2SJ463A
2SJ463A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sj463a.pdf Size:138K _nec

2SJ463A
2SJ463A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1 by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital cir

 5.1. 2sj461a.pdf Size:723K _upd

2SJ463A
2SJ463A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) • Can be driven by a

5.2. 2sj464.pdf Size:319K _toshiba

2SJ463A
2SJ463A



 5.3. 2sj465.pdf Size:371K _toshiba

2SJ463A
2SJ463A

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 µA (max) DSS (V = -16 V) DS Enhancemen

5.4. 2sj466.pdf Size:39K _sanyo

2SJ463A
2SJ463A

Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0

 5.5. 2sj462.pdf Size:62K _nec

2SJ463A
2SJ463A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for appli

5.6. 2sj460.pdf Size:294K _nec

2SJ463A
2SJ463A

5.7. 2sj461.pdf Size:711K _nec

2SJ463A
2SJ463A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in dig

5.8. 2sj461.pdf Size:1130K _kexin

2SJ463A
2SJ463A

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON) < 50Ω (VGS =-4V) 1.9+0.1 -0.1 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS

5.9. 2sj461-3.pdf Size:1139K _kexin

2SJ463A
2SJ463A

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-50V 1 2 ● ID =-0.1 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 50Ω (VGS =-4V) 1.9 -0.2 ● RDS(ON) < 100Ω (VGS =-2.5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltag

Другие MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 

 

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Список транзисторов

Обновления

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |
 

 

 

 
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