Справочник MOSFET. WNM3013

 

WNM3013 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WNM3013
   Маркировка: K*
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: SOT723

 Аналог (замена) для WNM3013

 

 

WNM3013 Datasheet (PDF)

 ..1. Size:1641K  willsemi
 wnm3013.pdf

WNM3013 WNM3013

WNM3013 WNM3013 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET DV (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGSS50G1.9@ V =2.5VGS4.0@ V =1.8VGSSOT-723 ESD Rating: 2000V HBMD3Descriptions 1 2The WNM3013 is N-Channel enhancement MOS G SField Effect Transistor. Uses advanced trench technology and design to prov

 8.1. Size:1778K  willsemi
 wnm3017.pdf

WNM3013 WNM3013

WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5)VDS (V) Typical RDS(on) (m) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2)(2)(1)(3) Descriptions DFN2x2-6L D D SThe WNM3017 is N-Channel enhancement 6 5 4MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8D Swith

 8.2. Size:2511K  willsemi
 wnm3018.pdf

WNM3013 WNM3013

WNM3018 WNM3018 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGS501.9@ V =2.5VGS5.4@ V =1.8VGSESD Rating: 2000V HBMDescriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc

 8.3. Size:465K  willsemi
 wnm3011.pdf

WNM3013 WNM3013

WNM3011WNM3011Http://www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS()0.028@ 10V30V0.039@ 4.5VSOT-23-6L SD DDescriptions6 5 4The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3D

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