WNMD2158WNMD2158www.sh-willsemi.com Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) ( )0.0148@ VGS=4.5V0.017@ VGS=3.1V200.019@ VGS=2.5VESD Rating: 2000V HBM TSSOP-8LD1/D2 S2 S2 G28 7 6 5DescriptionsThe WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate char

WNMD2153WNMD2153Dual N-Channel, 20V, 0.89A, Small Signal MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-363 DescriptionsD1 G2 S2The WNMD2153 is N-Channel enhancement 6 5 4MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suita

WNMD2154WNMD2154Dual N-Channel, 20V, 0.88A, Small Signal MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8V SOT-563 DescriptionsD1 G2 S26 5 4The WNMD2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suit

WNMD2166WNMD2166Dual N-Channel, 20V, 4.0A, Power MOSFET Http//:www.willsemi.comVDS (V) Rds(on) () 0.022@ V =4.5V GS0.023@ V =3.7V GS20 0.024@ VGS=3.1V 0.027@ V =2.5V GSPackageDescriptionsG1 D1/D2 G26 5 4The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( )0.0175@ VGS=4.5V0.0195@ VGS=3.1V200.0215@ VGS=2.5VESD Rating: 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G26 5 4The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) MOSFET2MOSFET126@ VGS=4.5V Gate 1 Gate 227@ VGS=4.0V Gate20 Protection30@ VGS=3.1V Diode33@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Descriptions Body DiodeThe WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) () 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8LD1/D2 S2 S2 G28 7 6 5The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Typical Rds(on) () 0.016@ V =4.5V GS 0.0175@ V =3.8V GS20 0.018@ VGS=3.1V 0.020@ V =2.5V GSSOT-23-6L Descriptions G1 D1/D2 G25 46The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 236@ VGS=4.5V Gate38@ VGS=4.0V Protection20 Diode41@ VGS=3.1V 43@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec

WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 326@ VGS=3.1V 429@ VGS=2.5V 2 ESD Rating:2000V HBM 1Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This

WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 219@ VGS=4.5V Gate20@ VGS=4.0V Protection12 Diode22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 14 @ VGS= 4.5V 14.5 @ VGS= 3.8V 20 15 @ VGS= 3.1V 16 @ VGS= 2.5V PDFN2.92.8-8L ESD protected D2 D1 D1 D2 Descriptions 5 8 7 6 The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to pro

WNMD2160WNMD2160Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.0157@ VGS=4.5V0.018@ VGS=3.1V200.020@ VGS=2.5VESD Rating: 2000V HBM SOT-23-6L DescriptionsThe WNMD2160 is N-Channel enhancement G1 D1/D2 G2MOS Field Effect Transistor. Uses advanced trench 6 5 4technology and design to provide excellent RDS (ON)with low gate cha

WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D26 5 4The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab

WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2ESD Protected 8 7 6 5Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to