IRF610A datasheet, аналоги, основные параметры
Наименование производителя: IRF610A 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 35 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO220
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Аналог (замена) для IRF610A
- подборⓘ MOSFET транзистора по параметрам
IRF610A даташит
..1. Size:930K samsung
irf610a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
8.4. Size:202K international rectifier
irf610pbf.pdf 
IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
8.5. Size:618K international rectifier
irf6100pbf.pdf 
PD - 96012B IRF6100PbF HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (
8.6. Size:199K international rectifier
irf610spbf.pdf 
IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Simple Drive R
8.7. Size:636K international rectifier
irf6100.pdf 
PD - 93930F IRF6100 HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (
8.8. Size:173K international rectifier
irf610l irf610lpbf.pdf 
IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing
8.9. Size:866K fairchild semi
irf610b.pdf 
IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast switch
8.11. Size:202K vishay
irf610 sihf610.pdf 
IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
8.12. Size:175K vishay
irf610s sihf610s irf610l sihf610l.pdf 
IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing
8.13. Size:2973K cn vbsemi
irf610p.pdf 
IRF610P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G
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