WNMD2160 - аналоги и даташиты транзистора

 

WNMD2160 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WNMD2160
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.3 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
   Тип корпуса: SOT23-6L
 

 Аналог (замена) для WNMD2160

   - подбор ⓘ MOSFET транзистора по параметрам

 

WNMD2160 Datasheet (PDF)

 ..1. Size:471K  willsemi
 wnmd2160.pdf pdf_icon

WNMD2160

WNMD2160WNMD2160Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.0157@ VGS=4.5V0.018@ VGS=3.1V200.020@ VGS=2.5VESD Rating: 2000V HBM SOT-23-6L DescriptionsThe WNMD2160 is N-Channel enhancement G1 D1/D2 G2MOS Field Effect Transistor. Uses advanced trench 6 5 4technology and design to provide excellent RDS (ON)with low gate cha

 7.1. Size:1188K  willsemi
 wnmd2166.pdf pdf_icon

WNMD2160

WNMD2166WNMD2166Dual N-Channel, 20V, 4.0A, Power MOSFET Http//:www.willsemi.comVDS (V) Rds(on) () 0.022@ V =4.5V GS0.023@ V =3.7V GS20 0.024@ VGS=3.1V 0.027@ V =2.5V GSPackageDescriptionsG1 D1/D2 G26 5 4The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

 7.2. Size:1072K  willsemi
 wnmd2168.pdf pdf_icon

WNMD2160

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) () 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8LD1/D2 S2 S2 G28 7 6 5The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 7.3. Size:1228K  willsemi
 wnmd2167.pdf pdf_icon

WNMD2160

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http//:www.willsemi.com VDS (V) Typical Rds(on) () 0.016@ V =4.5V GS 0.0175@ V =3.8V GS20 0.018@ VGS=3.1V 0.020@ V =2.5V GSSOT-23-6L Descriptions G1 D1/D2 G25 46The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WNM4001 , WNM4002 , WNM4006 , WNM4153 , WNM6001 , WNMD2153 , WNMD2154 , WNMD2158 , IRFZ44N , WNMD2162 , WNMD2165 , WNMD2166 , WNMD2168 , WNMD2171 , WNMD2172 , WNMD2173 , WNMD2174 .

 

 
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