WNMD2165. Аналоги и основные параметры

Наименование производителя: WNMD2165

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.41 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.32 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm

Тип корпуса: SOT363

Аналог (замена) для WNMD2165

- подборⓘ MOSFET транзистора по параметрам

 

WNMD2165 даташит

 ..1. Size:1757K  willsemi
 wnmd2165.pdf pdf_icon

WNMD2165

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This

 7.1. Size:1188K  willsemi
 wnmd2166.pdf pdf_icon

WNMD2165

WNMD2166 WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ V =4.5V GS 0.023@ V =3.7V GS 20 0.024@ VGS=3.1V 0.027@ V =2.5V GS Package Descriptions G1 D1/D2 G2 6 5 4 The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

 7.2. Size:1072K  willsemi
 wnmd2168.pdf pdf_icon

WNMD2165

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 7.3. Size:1228K  willsemi
 wnmd2167.pdf pdf_icon

WNMD2165

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Typical Rds(on) ( ) 0.016@ V =4.5V GS 0.0175@ V =3.8V GS 20 0.018@ VGS=3.1V 0.020@ V =2.5V GS SOT-23-6L Descriptions G1 D1/D2 G2 5 4 6 The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

ПОКАЗАТЬ ЕЩЁ

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