WNMD2172 - описание и поиск аналогов

WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2 ESD Protected 8 7 6 5 Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to

WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ VGS=2.5V ESD Rating 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G2 6 5 4 The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) MOSFET2 MOSFET1 26@ VGS=4.5V Gate 1 Gate 2 27@ VGS=4.0V Gate 20 Protection 30@ VGS=3.1V Diode 33@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Descriptions Body Diode The WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect

WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 36@ VGS=4.5V Gate 38@ VGS=4.0V Protection 20 Diode 41@ VGS=3.1V 43@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec

WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 3 26@ VGS=3.1V 4 29@ VGS=2.5V 2 ESD Rating 2000V HBM 1 Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus

WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 19@ VGS=4.5V Gate 20@ VGS=4.0V Protection 12 Diode 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti

WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D2 6 5 4 The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab