IRF610S - описание и поиск аналогов

IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Simple Drive R

IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

PD - 96012B IRF6100PbF HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (

PD - 93930F IRF6100 HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (

IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount VDS (V) 200 Available in tape and reel RDS(on) ( )VGS = 10 V 1.5 Dynamic dV/dt rating Available Qg (Max.) (nC) 8.2 Repetitive avalanche rated Qgs (nC) 1.8 Fast switching Available Qgd (nC) 4.5 Ease of paralleling Configuration Sing

IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast switch

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRF610P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G