Справочник MOSFET. WPM1481

 

WPM1481 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WPM1481
   Маркировка: WLSIC
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.1 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: DFN2X2-6L

 Аналог (замена) для WPM1481

 

 

WPM1481 Datasheet (PDF)

 ..1. Size:1057K  willsemi
wpm1481.pdf

WPM1481 WPM1481

WPM1481 WPM1481 Single P-Channel, -12V, -5.1A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical Rds(on) () I (A)DS D 0.024@ V = - 4.5V -5.5 GS -12 0.032@ V = - 2.5V -4.0 GS 0.047@ V = - 1.8V -2.5 GS DFN2*2-6L Descriptions D D S 6 5 4 The WPM1481 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provi

 8.1. Size:1149K  willsemi
wpm1485.pdf

WPM1481 WPM1481

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET Http//:www.willsemi.com V (V) Rds(on) () DS 0.016@ V =-4.5VGS -12 0.022@ V =-2.5VGS 0.032@ V =-1.8VGS DFN22-6L Descriptions D D S 6 5 4 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) S with low

 8.2. Size:502K  willsemi
wpm1480.pdf

WPM1481 WPM1481

WPM1480 WPM1480 Http://www.sh-willsemi.com Single P-Channel, -20 V, -1.5 A,Power Mosfet Description 3The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is 1suitable for use in DC-DC conversion applications. Standard 2Product WPM1480 is Pb-free. SC-70/SOT-323Features V R Typ (BR)DSS DS(on) 20

 8.3. Size:817K  willsemi
wpm1483.pdf

WPM1481 WPM1481

WPM1483WPM1483Single P-Channel, -12V, -3.5A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()0.031@ VGS=4.5V-12 0.040@ VGS=2.5V0.056@ VGS=1.8VSOT-23DescriptionsThe WPM1483 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable f

 8.4. Size:635K  willsemi
wpm1488.pdf

WPM1481 WPM1481

WPM1488WPM1488Single P-Channel, -12V, -1.4A, Power MOSFET www.sh-willsemi.comVDS (V) Typical Rds(on) () ID (A) 0.080@ VGS=4.5V -1.2 -12 0.086@ VGS=3.6V -1.0 0.105@ VGS=2.5V -1.0 SOT-323DescriptionsThe WPM1488 is P-Channel enhancementMOS Field Effect Transistor. Uses advancedtrench technology and design to provide excellentRDS (ON) with low gate charge. This de

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top