WPM2006 - Даташиты. Аналоги. Основные параметры

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu