WPM2026 - описание и поиск аналогов

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

WPM2006 WPM2006 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky DFN2*2 -6L Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products 1

WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.050 @ VGS= 4.5V -20 0.063 @ VGS= 2.5V 0.074 @ VGS = 1.8V DFN2x2-6L Descriptions D D S 6 5 4 The WPM2014 is P-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) S with low gate charge. This

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m ) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

WPM2015 WPM2015 Http //www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D 3 The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12 in DC-D

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 34@ V =-4.5V GS -20 39 @ V =-3.1V GS 45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This dev

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.495@ VGS= 4.5V D -20 0.665@ VGS= 2.5V S 0.882@ VGS= 1.8V G ESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

WPM2019 WPM2019 Http //www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( ) D 0.480@ VGS= 4.5V -20 0.620@ VGS= 2.5V S 0.780@ VGS= 1.8V G SOT-523 Descriptions The WPM2019 is P-Channel enhancement MOS D 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D D D 81 @ VGS=-4.5V -20 S S S S 110 @ VGS=-2.5V G G G G SOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

WPM2037 WPM2037 Single P-Channel, -20V, -3.6A , Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.047@ VGS= 4.5V -20 0.060@ VGS= 2.5V 0.076@ VGS= 1.8V SOT-23-6L Descriptions S D D The WPM2037 is P-Channel enhancement MOS 6 5 4 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitabl

WPM2009D WPM2009D -20V, -4A, 42m , 2.0W, DFN3x3, P-MOSFET Http //www.willsemi.com Bottom Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

WPM2005B WPM2005B Power MOSFET and Schottky Diode Features DFN3 2-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOS

WPM2049 WPM2049 Single P-Channel, -20V, -0.51A, Power MOSFET Http //www.sh-willsemi.com G VDS (V) Typical Rds(on) ( ) S 0.480@ VGS=-4.5V D -20 0.620@ VGS=-2.5V 0.780@ VGS=-1.8V DFN1006-3L Descriptions The WPM2049 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This device is s

WPM2065 WPM2065 Single P-Channel, -20V, -6.9A, Power MOSFET Http //www.sh-willsemi.com D D G V (V) Typical Rds(on) ( ) DS 0.017@ V =-4.5V GS D S -20 0.022@ V =-2.5V GS D D S 0.032@ V =-1.8V GS ESD Rating 4000V HBM DFN2X2-6L Descriptions 1 6 D The WPM2065 is P-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench D 2 5 D technology and design to provi

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) D D 43 @ VGS=-4.5V -20 S S 55 @ VGS=-2.5V G G SOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V -20 0.103@ VGS= 2.5V SOT-23 Descriptions D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power s

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design 1. Gate 2. Source D 3. Drain 3 1 2 G S Absolute Maximum Rating

SMD Type MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) DFN3X2-8L Unit mm 0.35 (max) 0.05 (max) 0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V) 0.25 (max) 0.08 (min) RDS(ON) 160m (VGS =-2.5V) 0.65 BSC 0.80 0.1 3.00 BSC Ultra Low VF Schottky 1 8 A C 7 2 A C 6 S D 3 G D 4 5 Absolu

www.msksemi.com WPM2015-MS Semiconductor Compiance APPLICATION Load Switch for Portable Devices DC/DC Converter FEATURE TrenchFET Power MOSFET I V(BR)DSS RDS(on)MAX D 90 m @-4.5V -20 V -3 A 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN SOT-23-3L Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-So

WPM2015-3/TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA