WPM2049WPM2049Single P-Channel, -20V, -0.51A, Power MOSFET Http://www.sh-willsemi.comGVDS (V) Typical Rds(on) ()S0.480@ VGS=-4.5VD-20 0.620@ VGS=-2.5V0.780@ VGS=-1.8VDFN1006-3LDescriptionsThe WPM2049 is P-Channel enhancement MOSField Effect Transistor. Uses advanced trenchDtechnology and design to provide excellent RDS (ON)with low gate charge. This device is s

WPM2048 WPM2048 Single P-Channel, -20V, -2.2A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (m) 96@ VGS=-4.5V -20 135@ VGS=-2.5V SOT-23 Descriptions D 3 The WPM2048 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conver

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1

WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This

WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 34@ V =-4.5V GS-20 39 @ V =-3.1V GS45 @ V =-2.5V GS SOT-23 Descriptions D 3 The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate charge. This dev

WPM2031 WPM2031 Single P-Channel, -20V, -0.65A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) () 0.495@ VGS=4.5V D -20 0.665@ VGS=2.5V S0.882@ VGS=1.8V GESD Protected SOT-723 Descriptions D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low

WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui

WPM2083 WPM2083 Single P-Channel, -20V, -2.4A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DDDD81 @ VGS=-4.5V -20 SSSS110 @ VGS=-2.5V GGGGSOT-23 Descriptions D 3 The WPM2083 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

WPM2037WPM2037Single P-Channel, -20V, -3.6A , Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.047@ VGS= 4.5V-20 0.060@ VGS= 2.5V0.076@ VGS= 1.8VSOT-23-6L DescriptionsSD DThe WPM2037 is P-Channel enhancement MOS 6 5 4Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitabl

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS

WPM2065WPM2065Single P-Channel, -20V, -6.9A, Power MOSFET Http://www.sh-willsemi.comD D GV (V) Typical Rds(on) ()DS0.017@ V =-4.5VGSDS-200.022@ V =-2.5VGSD D S0.032@ V =-1.8VGSESD Rating: 4000V HBMDFN2X2-6LDescriptions1 6 DThe WPM2065 is P-Channel enhancement DMOS Field Effect Transistor. Uses advanced trenchD2 5 Dtechnology and design to provi

WPM2081 WPM2081 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-4.5V -20 SS55 @ VGS=-2.5V GGSOT-23 Descriptions D The WPM2081 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D The WPM2026 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitab

Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s

Product specificationWPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) ( ) 0.056@ VGS= 4.5V -20 0.069@ VGS= 2.5V 0.086@ VGS= 1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in

SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu

www.msksemi.comWPM2015-MSSemiconductorCompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURETrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-So

WPM2015-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA