WPM2341 - описание и поиск аналогов

WPM2341 WPM2341 P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Porta

WPM2341 P-channel Enhancement Mode Power MOSFET FEATURES PWM applications Load switch Power management MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V ID Drain current -3 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERIST

WPM2341A WPM2341A P-Channel Enhancement Mode Mosfet Http //www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Por

Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package 3 Super high density cell design for extremely low RDS (ON) 1 2 Applications DC/DC Converter Load Switch SOT 23-3 Battery Powered System LCD Display inverter Power Management in Portable, Battery P

www.msksemi.com WPM2341-MS Semiconductor Compiance APPLICATION Load Switch for Portable Devices DC/DC Converter FEATURE TrenchFET Power MOSFET I V(BR)DSS RDS(on)MAX D 90 m @-4.5V -20 V -3 A 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN SOT-23-3L Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 DS V Gate-Sour

WPM2341A-3/TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLIC