XP151A13A0MR - Даташиты. Аналоги. Основные параметры
Наименование производителя: XP151A13A0MR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 120 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT23
Аналог (замена) для XP151A13A0MR
XP151A13A0MR Datasheet (PDF)
xp151a13a0mr.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance : 0.1 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in
xp151a13a0mr-g.pdf

Product specificationXP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m
xp151a13a0mr-g.pdf

XP151A13A0MR-G ETR1119_003Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high
xp151a13comr.pdf

XP151A13COMR20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H
Другие MOSFET... QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 , XP151A11B0MR , XP151A12A2MR , IRF1405 , XP152A11E5MR , XP152A12C0MR , CM100N03 , CM10N40 , CM10N60 , CM10N60AFZ , CM10N60AZ , CM10N60F .
History: MDZ1N60UMH | NTLJS1102PTBG | MMD50R380P | SNN3100L10Q | SUM110P04-05 | BLS7G2729LS-350P | STL22N65M5
History: MDZ1N60UMH | NTLJS1102PTBG | MMD50R380P | SNN3100L10Q | SUM110P04-05 | BLS7G2729LS-350P | STL22N65M5



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