CM100N03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CM100N03
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Cossⓘ - Выходная емкость: 350 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: TO220
CM100N03 Datasheet (PDF)
cm100n03.pdf
RCM100N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 USP 2 3
cm1000dxl-24s.pdf
CM1000DXL-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.comNX-Series Module1000 Amperes/1200 VoltsABG CDJEKL FAM AMK AHAMAT AU AU AV AUAJAL63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41LAEYMX(4 PLACES)40 AMAK391R Q383736DETAIL "A"ZS35T342
cm100du-12f.pdf
CM100DU-12FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/600 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis
cm100du-24f.pdf
CM100DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/1200 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2 FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis
cm100rl-12nf.pdf
CM100RL-12NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brakewww.pwrx.comNF-Series Module100 Amperes/600 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NAA ABKB U V WQUPLT Description:K KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module K
cm100tu-24f.pdf
CM100TU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/1200 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGU V WPOINT POINTDescription:J JPowerex IGBTMOD ModulesLLLare designe
cm100tu-12f.pdf
CM100TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/600 VoltsJT (4 TYP.)S - NUTS (5 TYP) KKRCMN PPGUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesL N L N Lare desig
cm100du-24nfh.pdf
CM100DU-24NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module100 Amperes/1200 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are designed for use in high frequency applications; 30 kHz W W W Wfor hard switchi
scm1001.pdf
SENSITRON SCM1001 SEMICONDUCTOR Technical Data DATASHEET 5284, Rev. B Three-Phase IGBT BRIDGE with BRAKE IGBT Three-Phase Input BRIDGE with INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE UPPER & LOWER REGENERATIVE BRAKE IGBT SWITCHES USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES 1200 VOLT, 25 AMP BRAKE IGBT 12
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918