IRF621 datasheet, аналоги, основные параметры
Наименование производителя: IRF621 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 60 max ns
Cossⓘ - Выходная емкость: 300 max pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO220
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Аналог (замена) для IRF621
- подборⓘ MOSFET транзистора по параметрам
IRF621 даташит
0.1. Size:124K international rectifier
irf6216pbf.pdf 
SMPS MOSFET PD - 95293 IRF6216PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset DC-DC converters -150V 0.240W@VGS =-10V -2.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4
0.2. Size:299K international rectifier
irf6218spbf.pdf 
PD - 96181 IRF6218SPbF SMPS MOSFET IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) D2Pak TO-262 l Fully Cha
0.3. Size:182K international rectifier
irf6215s.pdf 
PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.4. Size:270K international rectifier
auirf6215.pdf 
PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D
0.5. Size:275K international rectifier
irf6218l.pdf 
PD - 95863A IRF6218S SMPS MOSFET IRF6218L HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) TO-262 D2Pak l Fully Charact
0.6. Size:820K international rectifier
auirf6215s.pdf 
AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec
0.7. Size:177K international rectifier
irf6215pbf.pdf 
PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe
0.8. Size:103K international rectifier
irf6216.pdf 
PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 0.240 @VGS =-10V -2.2A DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001
0.9. Size:992K international rectifier
irf6215spbf irf6215lpbf.pdf 
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
0.10. Size:125K international rectifier
irf6215.pdf 
PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175 C Operating Temperature Fast Switching RDS(on) = 0.29 P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
0.11. Size:229K international rectifier
auirf6218l auirf6218s.pdf 
AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D
0.12. Size:193K international rectifier
irf6216pbf-1.pdf 
IRF6216PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 0.24 2 7 S D (@V = -10V) GS Qg (typical) 33 nC 3 6 S D ID 4 5 -2.2 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme
0.13. Size:105K international rectifier
irf6217.pdf 
PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 2.4 @VGS =-10V -0.7A DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN100
0.14. Size:194K international rectifier
irf6217pbf-1.pdf 
IRF6217PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 2.4 2 7 S D (@V = -10V) GS Qg (typical) 6 nC 3 6 S D ID 4 5 -0.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment
0.15. Size:136K international rectifier
irf6218pbf.pdf 
PD -95441 IRF6218PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp 150m @VGS = -10V -27A -150V Reset DC-DC converters l Lead-Free D Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including G Effective COSS to Simplify Design (See App. Note AN1001) TO-220AB S l Fully Charac
0.16. Size:125K international rectifier
irf6217pbf.pdf 
PD - 95252 IRF6217PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset -150V 2.4W@VGS =-10V -0.7A DC to DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001)
0.17. Size:992K international rectifier
irf6215lpbf irf6215spbf.pdf 
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
0.18. Size:454K infineon
irf6218spbf.pdf 
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m @ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
0.19. Size:2157K infineon
auirf6215s.pdf 
AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo
0.20. Size:240K inchange semiconductor
irf6218.pdf 
isc P-Channel MOSFET Transistor IRF6218,IIRF6218 FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM
Другие IGBT... IRF614, IRF614A, IRF614S, IRF615, IRF620, IRF620A, IRF620FI, IRF620S, SPP20N60C3, IRF6215, IRF6215L, IRF6215S, IRF622, IRF623, IRF624, IRF624A, IRF624S
