IRF6215L - Даташиты. Аналоги. Основные параметры

PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S

PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S

PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec

PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175 C Operating Temperature Fast Switching RDS(on) = 0.29 P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo