Справочник MOSFET. CS100N03FB9

 

CS100N03FB9 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS100N03FB9
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для CS100N03FB9

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS100N03FB9 Datasheet (PDF)

 5.1. Size:719K  crhj
cs100n03f b9.pdfpdf_icon

CS100N03FB9

Silicon N-Channel Power MOSFET R CS100N03F B9 General Description VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:809K  blue-rocket-elect
brcs100n03bd.pdfpdf_icon

CS100N03FB9

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar

 6.2. Size:730K  crhj
cs100n03 b4.pdfpdf_icon

CS100N03FB9

Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.3. Size:721K  crhj
cs100n03 b8.pdfpdf_icon

CS100N03FB9

Silicon N-Channel Power MOSFET R CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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History: AP4511GM | AP18N20GS | OSG70R350DTF | AP4411GM | AM3443P | 2SJ337

 

 
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