Справочник MOSFET. CS5N60A8H

 

CS5N60A8H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS5N60A8H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19.5 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для CS5N60A8H

 

 

CS5N60A8H Datasheet (PDF)

 ..1. Size:392K  wuxi china
 cs5n60a8h.pdf

CS5N60A8H CS5N60A8H

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60 A8H General Description VDSS 600 V CS5N60 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca

 7.1. Size:306K  wuxi china
 cs5n60a4h.pdf

CS5N60A8H CS5N60A8H

Silicon N-Channel Power MOSFET R CS5N60 A4H General Description VDSS 600 V CS5N60 A4H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:897K  jilin sino
 jcs5n60v jcs5n60r jcs5n60c jcs5n60f.pdf

CS5N60A8H CS5N60A8H

N RN-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V RdsonVgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 8.2. Size:976K  jilin sino
 jcs5n60vb jcs5n60rb jcs5n60cb jcs5n60fb.pdf

CS5N60A8H CS5N60A8H

N RN-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 8.3. Size:155K  lzg
 cs5n60d.pdf

CS5N60A8H CS5N60A8H

BRD5N60(CS5N60D) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 8.4. Size:160K  lzg
 cs5n60f.pdf

CS5N60A8H CS5N60A8H

BRF5N60(CS5N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 8.5. Size:333K  wuxi china
 cs5n60fa9hd.pdf

CS5N60A8H CS5N60A8H

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60F A9HD General Description VDSS 600 V CS5N60F A9HD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

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