SI2323DS-T1 - аналоги, параметры транзистора - Справочник транзисторов

SI2323DS-T1 даташит

..1. Size:905K cn vbsemi
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SI2323DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

5.1. Size:1762K kexin
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SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) 1 2 RDS(ON) 52m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 68m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. Drain

6.1. Size:188K vishay
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Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.1 0.068 at VGS = - 1.8 V - 3.5 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S

6.2. Size:1691K kexin
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SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23 Unit mm Features 2.9+0.1 -0.1 +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V) 1 2 RDS(ON) 68m (VGS =-1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A

Другие MOSFET... VB1695 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , 10N60 , SI2338DS-T1-GE3 , CS4N80FA9HD , VB2290 , CS4N80A4HD-G , VB8338 , CS4N80A3HD-G , CS4N70FA9R , VBA1615 .